FR2497405B1 - - Google Patents

Info

Publication number
FR2497405B1
FR2497405B1 FR8027687A FR8027687A FR2497405B1 FR 2497405 B1 FR2497405 B1 FR 2497405B1 FR 8027687 A FR8027687 A FR 8027687A FR 8027687 A FR8027687 A FR 8027687A FR 2497405 B1 FR2497405 B1 FR 2497405B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8027687A
Other languages
French (fr)
Other versions
FR2497405A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8027687A priority Critical patent/FR2497405A1/fr
Publication of FR2497405A1 publication Critical patent/FR2497405A1/fr
Application granted granted Critical
Publication of FR2497405B1 publication Critical patent/FR2497405B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
FR8027687A 1980-12-29 1980-12-29 Diode schottky a anneau de garde et son procede de fabrication Granted FR2497405A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8027687A FR2497405A1 (fr) 1980-12-29 1980-12-29 Diode schottky a anneau de garde et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8027687A FR2497405A1 (fr) 1980-12-29 1980-12-29 Diode schottky a anneau de garde et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2497405A1 FR2497405A1 (fr) 1982-07-02
FR2497405B1 true FR2497405B1 (cs) 1984-08-10

Family

ID=9249568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8027687A Granted FR2497405A1 (fr) 1980-12-29 1980-12-29 Diode schottky a anneau de garde et son procede de fabrication

Country Status (1)

Country Link
FR (1) FR2497405A1 (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19531369A1 (de) 1995-08-25 1997-02-27 Siemens Ag Halbleiterbauelement auf Siliciumbasis mit hochsperrendem Randabschluß

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
US3550260A (en) * 1968-12-26 1970-12-29 Motorola Inc Method for making a hot carrier pn-diode

Also Published As

Publication number Publication date
FR2497405A1 (fr) 1982-07-02

Similar Documents

Publication Publication Date Title
FR2479089B1 (cs)
FR2477843B1 (cs)
FR2482255B1 (cs)
FR2494914B3 (cs)
FR2480144B1 (cs)
FR2482430B1 (cs)
FR2483331B1 (cs)
FR2482148B1 (cs)
FR2479474B1 (cs)
FR2482187B1 (cs)
FR2475527B1 (cs)
FR2479548B1 (cs)
FR2481798B1 (cs)
GR75311B (cs)
FR2482621B1 (cs)
FR2475512B3 (cs)
FR2482985B1 (cs)
FR2490821B1 (cs)
FR2486174B1 (cs)
FR2479287B1 (cs)
FR2485003B1 (cs)
FR2480485B1 (cs)
IN151896B (cs)
FR2480288B1 (cs)
FR2481981B1 (cs)

Legal Events

Date Code Title Description
ST Notification of lapse