FR2494912A1 - Dispositif photocoupleur de detection - Google Patents
Dispositif photocoupleur de detection Download PDFInfo
- Publication number
- FR2494912A1 FR2494912A1 FR8024776A FR8024776A FR2494912A1 FR 2494912 A1 FR2494912 A1 FR 2494912A1 FR 8024776 A FR8024776 A FR 8024776A FR 8024776 A FR8024776 A FR 8024776A FR 2494912 A1 FR2494912 A1 FR 2494912A1
- Authority
- FR
- France
- Prior art keywords
- receiver
- light
- emitter
- optoelectronic device
- transmitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 230000005855 radiation Effects 0.000 claims description 24
- 230000005693 optoelectronics Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000004907 flux Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000295 emission spectrum Methods 0.000 claims 1
- 230000033228 biological regulation Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 108020003175 receptors Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8024776A FR2494912A1 (fr) | 1980-11-21 | 1980-11-21 | Dispositif photocoupleur de detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8024776A FR2494912A1 (fr) | 1980-11-21 | 1980-11-21 | Dispositif photocoupleur de detection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2494912A1 true FR2494912A1 (fr) | 1982-05-28 |
| FR2494912B1 FR2494912B1 (cs) | 1983-01-07 |
Family
ID=9248235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8024776A Granted FR2494912A1 (fr) | 1980-11-21 | 1980-11-21 | Dispositif photocoupleur de detection |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2494912A1 (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1001561A3 (en) * | 1998-11-11 | 2003-12-03 | Citizen Electronics Co., Ltd. | Infrared communication device |
| CN103895170A (zh) * | 2012-12-28 | 2014-07-02 | 鸿富锦精密工业（深圳）有限公司 | 光耦合透镜模仁 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1585979A (cs) * | 1967-09-27 | 1970-02-06 | ||
| FR2106710A5 (cs) * | 1970-09-22 | 1972-05-05 | Radiotechnique Compelec | |
| FR2225064A5 (en) * | 1973-04-04 | 1974-10-31 | Cometa | Reflection type photo-sensitive transistors head - sensitivity maintained constant for variable values of ambient lighting |
-
1980
- 1980-11-21 FR FR8024776A patent/FR2494912A1/fr active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1585979A (cs) * | 1967-09-27 | 1970-02-06 | ||
| FR2106710A5 (cs) * | 1970-09-22 | 1972-05-05 | Radiotechnique Compelec | |
| FR2225064A5 (en) * | 1973-04-04 | 1974-10-31 | Cometa | Reflection type photo-sensitive transistors head - sensitivity maintained constant for variable values of ambient lighting |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1001561A3 (en) * | 1998-11-11 | 2003-12-03 | Citizen Electronics Co., Ltd. | Infrared communication device |
| CN103895170A (zh) * | 2012-12-28 | 2014-07-02 | 鸿富锦精密工业（深圳）有限公司 | 光耦合透镜模仁 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2494912B1 (cs) | 1983-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |