FR2493047B1 - - Google Patents
Info
- Publication number
- FR2493047B1 FR2493047B1 FR8023015A FR8023015A FR2493047B1 FR 2493047 B1 FR2493047 B1 FR 2493047B1 FR 8023015 A FR8023015 A FR 8023015A FR 8023015 A FR8023015 A FR 8023015A FR 2493047 B1 FR2493047 B1 FR 2493047B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8023015A FR2493047A1 (fr) | 1980-10-28 | 1980-10-28 | Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique |
| EP81401533A EP0051505B1 (fr) | 1980-10-28 | 1981-10-02 | Transistor émetteur-récepteur de lumière pour télécommunications à l'alternat sur fibre optique |
| DE8181401533T DE3160184D1 (en) | 1980-10-28 | 1981-10-02 | Light emitting and receiving transistor for half-duplex telecommunication by an optical fibre |
| JP17127581A JPS57102082A (en) | 1980-10-28 | 1981-10-26 | Light emitting and receiving transistor |
| US06/315,862 US4485391A (en) | 1980-10-28 | 1981-10-28 | Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8023015A FR2493047A1 (fr) | 1980-10-28 | 1980-10-28 | Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2493047A1 FR2493047A1 (fr) | 1982-04-30 |
| FR2493047B1 true FR2493047B1 (US06633600-20031014-M00021.png) | 1982-11-26 |
Family
ID=9247398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8023015A Granted FR2493047A1 (fr) | 1980-10-28 | 1980-10-28 | Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique |
Country Status (5)
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3337492A1 (de) * | 1983-10-13 | 1985-04-25 | Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin | Elektro-optisches halbleiter-bauelement mit einer lichtwellen fuehrenden schicht und seine verwendung als elektro-optischer modulator |
| JPH0758774B2 (ja) * | 1984-10-26 | 1995-06-21 | 工業技術院長 | 半導体装置 |
| US4732446A (en) * | 1985-10-02 | 1988-03-22 | Lamar Gipson | Electrical circuit and optical data buss |
| US4845052A (en) * | 1986-02-07 | 1989-07-04 | Harris Corporation | Method of packaging a non-contact I/O signal transmission integrated circuit |
| US4912525A (en) * | 1986-09-17 | 1990-03-27 | Universal Photonix, Inc. | Apparatus for transmitting optical signals into a protected environment |
| US4761680A (en) * | 1986-09-29 | 1988-08-02 | General Electric Company | Photodetector |
| DE3732626A1 (de) * | 1987-09-28 | 1989-04-06 | Siemens Ag | Photo-lasertransistor |
| US4821082A (en) * | 1987-10-30 | 1989-04-11 | International Business Machines Corporation | Heterojunction bipolar transistor with substantially aligned energy levels |
| US4964693A (en) * | 1989-03-28 | 1990-10-23 | Motorola, Inc. | Radio having optical controls and method of optically controlling same |
| US5173795A (en) * | 1989-03-28 | 1992-12-22 | Motorola, Inc. | Optically controlled radio |
| JPH0397267A (ja) * | 1989-09-11 | 1991-04-23 | Mitsubishi Electric Corp | ヘテロ接合アバランシェトランジスタ |
| US5541704A (en) * | 1994-08-08 | 1996-07-30 | Eastman Kodak Company | Camera with LED photometer |
| FR2724769B1 (fr) * | 1994-09-16 | 1996-12-06 | Thomson Csf | Procede de realisation de diodes laser a emission surfacique |
| US6229160B1 (en) * | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
| US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
| US7998807B2 (en) * | 2003-08-22 | 2011-08-16 | The Board Of Trustees Of The University Of Illinois | Method for increasing the speed of a light emitting biopolar transistor device |
| US7696536B1 (en) * | 2003-08-22 | 2010-04-13 | The Board Of Trustees Of The University Of Illinois | Semiconductor method and device |
| US7286583B2 (en) * | 2003-08-22 | 2007-10-23 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser devices and methods |
| US7354780B2 (en) * | 2003-08-22 | 2008-04-08 | The Board Of Trustees Of The University Of Illinois | Semiconductor light emitting devices and methods |
| US20050040432A1 (en) * | 2003-08-22 | 2005-02-24 | The Board Of Trustees Of The University Of Illinois | Light emitting device and method |
| US7091082B2 (en) | 2003-08-22 | 2006-08-15 | The Board Of Trustees Of The University Of Illinois | Semiconductor method and device |
| US7859071B2 (en) * | 2005-03-31 | 2010-12-28 | Finisar Corporation | Power and communication interface for sensors using a single tethered fiber |
| US8154414B2 (en) * | 2005-03-31 | 2012-04-10 | Finisar Corporation | Systems and methods for collecting data with sensors |
| US7535034B2 (en) * | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
| US7711015B2 (en) * | 2007-04-02 | 2010-05-04 | The Board Of Trustees Of The University Of Illinois | Method for controlling operation of light emitting transistors and laser transistors |
| DE102016202386B3 (de) * | 2016-02-17 | 2017-08-10 | Siemens Aktiengesellschaft | Spannungswandler mit einer Strommessvorrichtung |
| GB2569994B (en) * | 2018-01-08 | 2020-07-15 | Leonardo Mw Ltd | A dual band photodiode element and method of making the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5229334A (en) * | 1975-08-28 | 1977-03-05 | Mabuchi Motor Co Ltd | Battery-operated model toy equipped with radio control |
| JPS5448493A (en) * | 1977-03-23 | 1979-04-17 | Toshiba Corp | Semiconductor optical device |
| JPS53116792A (en) * | 1977-03-23 | 1978-10-12 | Toshiba Corp | Semiconductor light emitting-photo detecting composite device |
| FR2406896A1 (fr) * | 1977-10-18 | 1979-05-18 | Thomson Csf | Diode emettrice et receptrice en lumiere notamment pour telecommunications optiques |
| US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
| JPS5598880A (en) * | 1979-01-20 | 1980-07-28 | Nec Corp | Light transmitting/receiving semiconductor device |
| US4388633A (en) * | 1980-09-29 | 1983-06-14 | Hughes Aircraft Company | Monolithic transistor coupled electroluminescent diode |
-
1980
- 1980-10-28 FR FR8023015A patent/FR2493047A1/fr active Granted
-
1981
- 1981-10-02 DE DE8181401533T patent/DE3160184D1/de not_active Expired
- 1981-10-02 EP EP81401533A patent/EP0051505B1/fr not_active Expired
- 1981-10-26 JP JP17127581A patent/JPS57102082A/ja active Pending
- 1981-10-28 US US06/315,862 patent/US4485391A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4485391A (en) | 1984-11-27 |
| JPS57102082A (en) | 1982-06-24 |
| EP0051505A1 (fr) | 1982-05-12 |
| DE3160184D1 (en) | 1983-05-19 |
| EP0051505B1 (fr) | 1983-04-13 |
| FR2493047A1 (fr) | 1982-04-30 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| ST | Notification of lapse |