FR2479278B1 - - Google Patents

Info

Publication number
FR2479278B1
FR2479278B1 FR8006693A FR8006693A FR2479278B1 FR 2479278 B1 FR2479278 B1 FR 2479278B1 FR 8006693 A FR8006693 A FR 8006693A FR 8006693 A FR8006693 A FR 8006693A FR 2479278 B1 FR2479278 B1 FR 2479278B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8006693A
Other languages
French (fr)
Other versions
FR2479278A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8006693A priority Critical patent/FR2479278A1/fr
Publication of FR2479278A1 publication Critical patent/FR2479278A1/fr
Application granted granted Critical
Publication of FR2479278B1 publication Critical patent/FR2479278B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
FR8006693A 1980-03-26 1980-03-26 Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede Granted FR2479278A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8006693A FR2479278A1 (fr) 1980-03-26 1980-03-26 Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8006693A FR2479278A1 (fr) 1980-03-26 1980-03-26 Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede

Publications (2)

Publication Number Publication Date
FR2479278A1 FR2479278A1 (fr) 1981-10-02
FR2479278B1 true FR2479278B1 (enExample) 1982-02-19

Family

ID=9240122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8006693A Granted FR2479278A1 (fr) 1980-03-26 1980-03-26 Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede

Country Status (1)

Country Link
FR (1) FR2479278A1 (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2161798B1 (enExample) * 1971-11-30 1974-09-27 Radiotechnique Compelec
FR2284982A1 (fr) * 1974-09-16 1976-04-09 Radiotechnique Compelec Procede de diffusion d'impuretes dans des corps semiconducteurs

Also Published As

Publication number Publication date
FR2479278A1 (fr) 1981-10-02

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Legal Events

Date Code Title Description
ST Notification of lapse