FR2477730A1 - Liquid crystal display cell transparent electrode mfr. - includes heat treatment in nitrogen atmos. to increase laser absorption - Google Patents
Liquid crystal display cell transparent electrode mfr. - includes heat treatment in nitrogen atmos. to increase laser absorption Download PDFInfo
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- FR2477730A1 FR2477730A1 FR8005195A FR8005195A FR2477730A1 FR 2477730 A1 FR2477730 A1 FR 2477730A1 FR 8005195 A FR8005195 A FR 8005195A FR 8005195 A FR8005195 A FR 8005195A FR 2477730 A1 FR2477730 A1 FR 2477730A1
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- France
- Prior art keywords
- electrode
- liquid crystal
- heat treatment
- transparent electrode
- transparent
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 14
- 238000010438 heat treatment Methods 0.000 title abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 title abstract description 4
- 238000010521 absorption reaction Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 238000000137 annealing Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 210000002858 crystal cell Anatomy 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000004990 Smectic liquid crystal Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 241001572175 Gaza Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Geochemistry & Mineralogy (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
La présente invention se rapporte aux procédés de fabrication d'une électrode transparente qui permettent de former sur un substrat lui-même transparent une electrode destinée à recevoir une tension électrique et permettant le passage des rayons lumineux. The present invention relates to methods of manufacturing a transparent electrode which make it possible to form, on a substrate which is itself transparent, an electrode intended to receive an electric voltage and allowing the passage of light rays.
Elle concerne également les électrodes transparentes fabriquées selon ce procédé, et les cellules à cristal liquide dans lesquelles on utilise de telles électrodes transparentes pour visualiser des informations.It also relates to the transparent electrodes produced by this process, and to the liquid crystal cells in which such transparent electrodes are used to display information.
Il est connu de réaliser une cellule à cristal liquide en enfermant entre deux lames de verre une couche mince de cristal liquide en phase smectique. Pour inscrire les informations dans cette couche de cristal liquide on utilise un effet thermo-optique qui consiste à chauffer localement le cristal liquide au point que l'on désire inscrire pour le porter dans la phase liquide isotrope. En refroidissant ensuite brutalement ces emplacements ainsi chauffés, le cristal liquide repasse dans la phase smectique mais prend alors une structure diffusante dite en conique focale. Pour effacer ensuite les informations ainsi inscrites on soumet le cristal liquide à un champ électrique suffisant par I1 intermédiaire de deux électrodes déposées sur les faces internes des lames de verre qui contiennent le cristal liquide.L'une au moins de ces électrodes, si l'on travaille par réflexion, et éventuellement les deux, si l'on travaille par transmission, doivent être transparentes au rayonnement lumineux utilisé par la visualisation, et de préférence à l'ensemble du spectre lumineux visible. It is known to produce a liquid crystal cell by enclosing between two glass slides a thin layer of liquid crystal in the smectic phase. To register the information in this layer of liquid crystal, a thermo-optical effect is used which consists in locally heating the liquid crystal to the point that it is desired to register in order to carry it in the isotropic liquid phase. By then brutally cooling these locations thus heated, the liquid crystal returns to the smectic phase but then takes on a diffusing structure called a focal conic. To then erase the information thus entered, the liquid crystal is subjected to a sufficient electric field by means of two electrodes deposited on the internal faces of the glass slides which contain the liquid crystal. At least one of these electrodes, if the one works by reflection, and possibly both, if one works by transmission, must be transparent to the light radiation used by the display, and preferably to the entire visible light spectrum.
Pour obtenir ce chauffage local de la couche de cristal liquide, on utilise le plus souvent un laser dont on défléchit le faisceau de sortie pour balayer la cellule selon le motif à inscrire. To obtain this local heating of the liquid crystal layer, a laser is most often used, the output beam of which is deflected to scan the cell according to the pattern to be registered.
Ce laser émet de préférence dans l'infra-rouge et est par exemple un laser YAG de longueur d'onde 1,05 microns, ou un laser semiconducteur du type Gazas de longueur d'onde 0,85 microns. Le chauffage s'effectue par absorption du faisceau infra-rouge dans la cellule aux endroits balayés. This laser preferably emits in the infrared and is for example a YAG laser of wavelength 1.05 microns, or a semiconductor laser of the Gazas type of wavelength 0.85 microns. The heating is carried out by absorption of the infrared beam in the cell at the scanned places.
Comme les éléments de cette cellule sont transparents pour les besoins de la visualisation, l'absorption lumineuse est relativement faible même dans le proche infra-rouge. As the elements of this cell are transparent for viewing purposes, the light absorption is relatively low even in the near infrared.
On est donc amené à utiliser un laser de grande puissance, et éventuellement un balayage de faible vitesse, pour obtenir un chauffage suffisant en utilisant la faible absorption existante. La plus grande partie de l'énergie fournie par ce laser est donc perdue, et le laser est fortement surdîmensionné par rapport à ce qui serait necessaire si on pouvait absorber une fraction plus importante de son flux lumineux. It is therefore necessary to use a high power laser, and possibly a low speed scan, to obtain sufficient heating using the low existing absorption. Most of the energy supplied by this laser is therefore lost, and the laser is greatly oversized compared to what would be necessary if we could absorb a larger fraction of its luminous flux.
Pour obtenir une électrode qui soit à la fois transparente dans le visible, et absorbante dans l'infra-rouge, l'invention propose un procédé de fabrication d'une électrode transparente, du type consistant à déposer sur un substrat une couche conductrice transparente, et à lui faire subir un recuit, principale caractérisé en ce que ce recuit s'effectue sous atmosphère d'azote. To obtain an electrode which is both transparent in the visible, and absorbent in the infrared, the invention provides a method of manufacturing a transparent electrode, of the type consisting in depositing on a substrate a transparent conductive layer, and to subject it to an annealing, the main characterized in that this annealing takes place under a nitrogen atmosphere.
D'autres particularités et avantages de l'invention apparaitront clairement dans la description suivante présentée à titre d'exemple non limitatif -notamment quant aux valeurs numériques citées. Other particularities and advantages of the invention will appear clearly in the following description presented by way of nonlimiting example -notably as regards the numerical values cited.
La première étape de la fabrication consiste à déposer un alliage conducteur transparent sous une épaisseur convenable sur le substrat choisi. The first stage of manufacturing consists in depositing a transparent conductive alloy under a suitable thickness on the chosen substrate.
Pour cela on procède à la pulvérisation cathodique d'un mélange d'indium et d'étain en parties sensiblement égales sur un substrat en verre. This is done by sputtering a mixture of indium and tin in substantially equal parts on a glass substrate.
L'atmosphère de enceinte de pulvérisation est un mélange d'argon et d'oxygène avec des pressions partielles dans un rapport 15/1 et une pression totale d'environ 10 Torrs. The spray enclosure atmosphere is a mixture of argon and oxygen with partial pressures in a ratio 15/1 and a total pressure of approximately 10 Torrs.
En alimentant le dispositif de pulvérisation sous une puissance de 900 watts, et en le laissant fonctionner pendant 15 minutes, on obtient une couche d'une épaisseur d'environ 0,9 microns. By supplying the spraying device with a power of 900 watts, and leaving it to operate for 15 minutes, a layer with a thickness of approximately 0.9 microns is obtained.
Pour stabiliser la couche ainsi obtenue et avoir des caractéristiques électriques bien déterminées, il est nécessaire de proce- der ensuite à un recuit. Les caractéristiques obtenues sont variables en fonction de ce recuit et les meilleurs résultats ont jusqu'ici été obtenus en procédant à un recuit simple dans l'atmosphère ambiante à une température de 4000 Celsius pendant 2 heures. In order to stabilize the layer thus obtained and to have well-defined electrical characteristics, it is then necessary to anneal it. The characteristics obtained are variable as a function of this annealing and the best results have so far been obtained by carrying out a simple annealing in the ambient atmosphere at a temperature of 4000 Celsius for 2 hours.
Après ce traitement la couche presente une résistivité de surface égale à 120 ohms - carré, une couleur jaunâtre, et un#coeffi- dent de transmission sensiblement constant et égal à 85% pour des longueurs d'onde de la lumière comprises entre 0,4 microns et 1,2 microns. After this treatment, the layer has a surface resistivity equal to 120 ohms - square, a yellowish color, and a # constant transmission coefficient equal to 85% for wavelengths of light between 0.4 microns and 1.2 microns.
Selon l'invention on effectue le traitement thermique sous azote. According to the invention, the heat treatment is carried out under nitrogen.
Pour cela le substrat recouvert de la couche précédemment obtenue par pulvérisation cathodique est placé dans une enceinte parcourue par un courant d'azote à la pression atmosphèrique. Après avoir maintenu un débit initial assez important pour obtenir une bonne purge de cette enceinte, ce débit est réduit à quelques litres par heure de manière à simplement entrainer les quelques résidus de dégazage éventuels et à ne pas laisser rentrer d'autres gaz. For this, the substrate covered with the layer previously obtained by sputtering is placed in an enclosure traversed by a stream of nitrogen at atmospheric pressure. After maintaining an initial flow rate that is large enough to obtain good purging of this enclosure, this flow rate is reduced to a few liters per hour so as to simply entrain any degassing residues that may be present and not to allow other gases to enter.
Cette enceinte est placée dans un four et on fait croitre la température depuis l'ambiante jusque environ 4000 Celsius, et ceci en une durée d'environ 30 minutes. This enclosure is placed in an oven and the temperature is increased from the ambient to approximately 4000 Celsius, and this in a period of approximately 30 minutes.
Dès que cette température de 4000 Celsius est atteinte, on procéde à un refroidissement relativement long qui peut durer environ 1 heure. As soon as this temperature of 4000 Celsius is reached, one proceeds to a relatively long cooling which can last approximately 1 hour.
Les caractéristiques de la couche après ce traitement sont profondement différentes de celles obtenues après le recuit à l'air. The characteristics of the layer after this treatment are significantly different from those obtained after air annealing.
La résistivité de surface est tombée aux environs de la dizaine d'ohms-carré. Elle varie sensiblement de 5 à 15 ohms-carré selon la durée du recuit en augmentant lorsque le temps de recuit augmente de 1 à 3 heures. The surface resistivity fell to around ten square ohms. It varies significantly from 5 to 15 ohms-square depending on the duration of the annealing, increasing when the annealing time increases by 1 to 3 hours.
La couleur de la couche est gris verdâtre et sa transmission est toujours sensiblement constante et égale à 85%, mais seulement dans une gamme de 0,4 à 0,7 microns de longueur d'onde, c'est à dire sensiblement dans la gamme des lumières visibles. A partir de 0,7 microns, cette transmission chute et atteint une valeur de 50% pour une longueur d'onde de 1,06microns. The color of the layer is greenish gray and its transmission is always substantially constant and equal to 85%, but only in a range of 0.4 to 0.7 microns in wavelength, i.e. substantially in the range visible lights. From 0.7 microns, this transmission drops and reaches a value of 50% for a wavelength of 1.06 microns.
L'indice de la couche est relativement élevé puisqu'il atteint la valeur n 1 2,30. The layer index is relatively high since it reaches the value n 1 2.30.
On constate donc qu'une telle couche permet d'absorber à son niveau 502 des radiations lumineuses fournies par un laser du type YANG. Compte-tenu de l'absorption dans le restant de la cellule, qui n'est pas négligeable, et de l'éventuelle traversée de deux électrodes, on arrive ainsi à absorber nettement plus de la moitié de l'énergie du laser dans une cellule d'affichage à cristal liquide. Ceci permet de construire des dispositifs d'affichage à cristal liquide par adressage avec un laser de petite taille et donc très intéressants. It is therefore found that such a layer makes it possible to absorb at its level 502 light radiation supplied by a laser of the YANG type. Given the absorption in the rest of the cell, which is not negligible, and the possible crossing of two electrodes, we thus manage to absorb significantly more than half of the laser energy in a cell liquid crystal display. This makes it possible to build liquid crystal display devices by addressing with a small laser and therefore very interesting.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8005195A FR2477730A1 (en) | 1980-03-07 | 1980-03-07 | Liquid crystal display cell transparent electrode mfr. - includes heat treatment in nitrogen atmos. to increase laser absorption |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8005195A FR2477730A1 (en) | 1980-03-07 | 1980-03-07 | Liquid crystal display cell transparent electrode mfr. - includes heat treatment in nitrogen atmos. to increase laser absorption |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2477730A1 true FR2477730A1 (en) | 1981-09-11 |
Family
ID=9239449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8005195A Withdrawn FR2477730A1 (en) | 1980-03-07 | 1980-03-07 | Liquid crystal display cell transparent electrode mfr. - includes heat treatment in nitrogen atmos. to increase laser absorption |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2477730A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4718751A (en) * | 1984-11-16 | 1988-01-12 | Seiko Epson Corporation | Optical panel and method of fabrication |
-
1980
- 1980-03-07 FR FR8005195A patent/FR2477730A1/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4718751A (en) * | 1984-11-16 | 1988-01-12 | Seiko Epson Corporation | Optical panel and method of fabrication |
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