FR2470443B1 - - Google Patents

Info

Publication number
FR2470443B1
FR2470443B1 FR7929151A FR7929151A FR2470443B1 FR 2470443 B1 FR2470443 B1 FR 2470443B1 FR 7929151 A FR7929151 A FR 7929151A FR 7929151 A FR7929151 A FR 7929151A FR 2470443 B1 FR2470443 B1 FR 2470443B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7929151A
Other languages
French (fr)
Other versions
FR2470443A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7929151A priority Critical patent/FR2470443A1/fr
Publication of FR2470443A1 publication Critical patent/FR2470443A1/fr
Application granted granted Critical
Publication of FR2470443B1 publication Critical patent/FR2470443B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
FR7929151A 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues Granted FR2470443A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7929151A FR2470443A1 (fr) 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7929151A FR2470443A1 (fr) 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues

Publications (2)

Publication Number Publication Date
FR2470443A1 FR2470443A1 (fr) 1981-05-29
FR2470443B1 true FR2470443B1 (enExample) 1983-07-22

Family

ID=9232124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7929151A Granted FR2470443A1 (fr) 1979-11-27 1979-11-27 Procede de fabrication de diodes zener et diodes obtenues

Country Status (1)

Country Link
FR (1) FR2470443A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501914A1 (fr) * 1981-03-13 1982-09-17 Thomson Csf Diode zener 4 a 8 volts fonctionnant en avalanche a faible niveau de courant et procede de fabrication
JP2000506685A (ja) * 1996-12-24 2000-05-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ガラス被覆半導体装置の製造方法及びガラス被覆半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
FR2470443A1 (fr) 1981-05-29

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Legal Events

Date Code Title Description
TP Transmission of property