FR2466861B1 - - Google Patents

Info

Publication number
FR2466861B1
FR2466861B1 FR7924889A FR7924889A FR2466861B1 FR 2466861 B1 FR2466861 B1 FR 2466861B1 FR 7924889 A FR7924889 A FR 7924889A FR 7924889 A FR7924889 A FR 7924889A FR 2466861 B1 FR2466861 B1 FR 2466861B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7924889A
Other languages
French (fr)
Other versions
FR2466861A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7924889A priority Critical patent/FR2466861A1/fr
Publication of FR2466861A1 publication Critical patent/FR2466861A1/fr
Application granted granted Critical
Publication of FR2466861B1 publication Critical patent/FR2466861B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
FR7924889A 1979-10-05 1979-10-05 Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure Granted FR2466861A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7924889A FR2466861A1 (fr) 1979-10-05 1979-10-05 Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7924889A FR2466861A1 (fr) 1979-10-05 1979-10-05 Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure

Publications (2)

Publication Number Publication Date
FR2466861A1 FR2466861A1 (fr) 1981-04-10
FR2466861B1 true FR2466861B1 (enExample) 1983-05-13

Family

ID=9230381

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7924889A Granted FR2466861A1 (fr) 1979-10-05 1979-10-05 Structure de diode schottky a faible bruit, et transistor a effet de champ dont la grille possede une telle structure

Country Status (1)

Country Link
FR (1) FR2466861A1 (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126761A (en) * 1975-04-25 1976-11-05 Sony Corp Schottky barrier type semi-conductor unit
US4143384A (en) * 1975-12-11 1979-03-06 Raytheon Company Low parasitic capacitance diode

Also Published As

Publication number Publication date
FR2466861A1 (fr) 1981-04-10

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Legal Events

Date Code Title Description
ST Notification of lapse