FR2456391B1 - - Google Patents

Info

Publication number
FR2456391B1
FR2456391B1 FR8010456A FR8010456A FR2456391B1 FR 2456391 B1 FR2456391 B1 FR 2456391B1 FR 8010456 A FR8010456 A FR 8010456A FR 8010456 A FR8010456 A FR 8010456A FR 2456391 B1 FR2456391 B1 FR 2456391B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8010456A
Other languages
French (fr)
Other versions
FR2456391A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2456391A1 publication Critical patent/FR2456391A1/fr
Application granted granted Critical
Publication of FR2456391B1 publication Critical patent/FR2456391B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Networks Using Active Elements (AREA)
FR8010456A 1979-05-10 1980-05-09 Integrated circuit with variable phase shifter - controlled by signal set by semiconductor variable resistor Granted FR2456391A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7916196 1979-05-10
NL8011440 1980-04-03

Publications (2)

Publication Number Publication Date
FR2456391A1 FR2456391A1 (en) 1980-12-05
FR2456391B1 true FR2456391B1 (enExample) 1983-02-25

Family

ID=26645581

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8010456A Granted FR2456391A1 (en) 1979-05-10 1980-05-09 Integrated circuit with variable phase shifter - controlled by signal set by semiconductor variable resistor

Country Status (1)

Country Link
FR (1) FR2456391A1 (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465213A (en) * 1966-06-20 1969-09-02 Frances B Hugle Self-compensating structure for limiting base drive current in transistors
DE1944543A1 (de) * 1969-09-02 1971-03-11 Siemens Ag Anordnung zur Kompensation der Basisweite eines Transistors in Murphy-Technik
US3597639A (en) * 1969-12-11 1971-08-03 Rca Corp Phase shift circuits

Also Published As

Publication number Publication date
FR2456391A1 (en) 1980-12-05

Similar Documents

Publication Publication Date Title
FR2447652B1 (enExample)
FR2445839B1 (enExample)
BR8002583A (enExample)
BR8006808A (enExample)
FR2448219B1 (enExample)
FR2449765B1 (enExample)
FR2447661B1 (enExample)
CH664466GA3 (enExample)
FR2448059B1 (enExample)
FR2449151B1 (enExample)
FR2447595B1 (enExample)
FR2446550B1 (enExample)
FR2449514B1 (enExample)
FR2449274B3 (enExample)
AU79558S (enExample)
AU78270S (enExample)
AU79559S (enExample)
AU78271S (enExample)
AU79557S (enExample)
BR5901094U (enExample)
AU79826S (enExample)
AU79918S (enExample)
AU79950S (enExample)
AU80228S (enExample)
AU78391S (enExample)

Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse