FR2449335B1 - - Google Patents
Info
- Publication number
- FR2449335B1 FR2449335B1 FR8001519A FR8001519A FR2449335B1 FR 2449335 B1 FR2449335 B1 FR 2449335B1 FR 8001519 A FR8001519 A FR 8001519A FR 8001519 A FR8001519 A FR 8001519A FR 2449335 B1 FR2449335 B1 FR 2449335B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20139/79A IT1111981B (it) | 1979-02-13 | 1979-02-13 | Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2449335A1 FR2449335A1 (fr) | 1980-09-12 |
| FR2449335B1 true FR2449335B1 (US06650917-20031118-M00005.png) | 1983-02-04 |
Family
ID=11164126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8001519A Granted FR2449335A1 (fr) | 1979-02-13 | 1980-01-24 | Structure de transistor pnp lateral pour haute tension v(br)ceo, protege contre une inversion des polarites d'alimentation et produit resultant |
Country Status (6)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852347B2 (ja) * | 1980-02-04 | 1983-11-22 | 株式会社日立製作所 | 高耐圧半導体装置 |
| FR2575333B1 (fr) * | 1984-12-21 | 1987-01-23 | Radiotechnique Compelec | Dispositif de protection d'un circuit integre contre les decharges electrostatiques |
| GB2201543A (en) * | 1987-02-25 | 1988-09-01 | Philips Electronic Associated | A photosensitive device |
| JPH01126144U (US06650917-20031118-M00005.png) * | 1988-02-22 | 1989-08-29 | ||
| US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
| US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
| FR1400150A (fr) * | 1963-07-08 | 1965-05-21 | Rca Corp | Dispositifs semi-conducteurs perfectionnés |
| US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
| US3651565A (en) * | 1968-09-09 | 1972-03-28 | Nat Semiconductor Corp | Lateral transistor structure and method of making the same |
| US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
| US4125853A (en) * | 1977-03-28 | 1978-11-14 | Bell Telephone Laboratories, Incorporated | Integrated circuit transistor |
| JPS5643005Y2 (US06650917-20031118-M00005.png) * | 1978-12-26 | 1981-10-08 |
-
1979
- 1979-02-13 IT IT20139/79A patent/IT1111981B/it active
-
1980
- 1980-01-24 FR FR8001519A patent/FR2449335A1/fr active Granted
- 1980-01-25 GB GB8002603A patent/GB2042259B/en not_active Expired
- 1980-02-12 US US06/120,923 patent/US4319262A/en not_active Expired - Lifetime
- 1980-02-13 DE DE19803005367 patent/DE3005367A1/de active Granted
- 1980-02-13 JP JP1560280A patent/JPS55111166A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT1111981B (it) | 1986-01-13 |
| US4319262A (en) | 1982-03-09 |
| DE3005367C2 (US06650917-20031118-M00005.png) | 1988-01-07 |
| FR2449335A1 (fr) | 1980-09-12 |
| GB2042259B (en) | 1983-09-01 |
| JPS55111166A (en) | 1980-08-27 |
| GB2042259A (en) | 1980-09-17 |
| JPS6239547B2 (US06650917-20031118-M00005.png) | 1987-08-24 |
| DE3005367A1 (de) | 1980-08-21 |
| IT7920139A0 (it) | 1979-02-13 |
