FR2447096A1 - Cadmium sulphide photovoltaic cell - has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first - Google Patents

Cadmium sulphide photovoltaic cell - has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first

Info

Publication number
FR2447096A1
FR2447096A1 FR7901553A FR7901553A FR2447096A1 FR 2447096 A1 FR2447096 A1 FR 2447096A1 FR 7901553 A FR7901553 A FR 7901553A FR 7901553 A FR7901553 A FR 7901553A FR 2447096 A1 FR2447096 A1 FR 2447096A1
Authority
FR
France
Prior art keywords
layer
cadmium sulphide
sulphide
photovoltaic cell
lower temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7901553A
Other languages
French (fr)
Other versions
FR2447096B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chevron USA Inc
Original Assignee
Chevron Research and Technology Co
Chevron Research Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chevron Research and Technology Co, Chevron Research Co filed Critical Chevron Research and Technology Co
Priority to FR7901553A priority Critical patent/FR2447096A1/en
Publication of FR2447096A1 publication Critical patent/FR2447096A1/en
Application granted granted Critical
Publication of FR2447096B1 publication Critical patent/FR2447096B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Cell comprises a substrate; a first Cd sulphide layer; a second Cd sulphide layer deposited at a temp. at least 20 degrees C , pref. 30-60 degrees C , and esp. about 50 degrees C the deposition temp. for the first Cd sulphide layer; and a barrier layer, pref. of Cd sulphide. Esp. in solar cells; use of a Cd sulphide layer improves cell efficiency.
FR7901553A 1979-01-22 1979-01-22 Cadmium sulphide photovoltaic cell - has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first Granted FR2447096A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7901553A FR2447096A1 (en) 1979-01-22 1979-01-22 Cadmium sulphide photovoltaic cell - has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7901553A FR2447096A1 (en) 1979-01-22 1979-01-22 Cadmium sulphide photovoltaic cell - has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first

Publications (2)

Publication Number Publication Date
FR2447096A1 true FR2447096A1 (en) 1980-08-14
FR2447096B1 FR2447096B1 (en) 1983-04-29

Family

ID=9221041

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7901553A Granted FR2447096A1 (en) 1979-01-22 1979-01-22 Cadmium sulphide photovoltaic cell - has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first

Country Status (1)

Country Link
FR (1) FR2447096A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1446911A (en) * 1964-09-18 1966-07-22 Ass Elect Ind Improvements to the production processes of a cadmium sulphide layer
US3376163A (en) * 1961-08-11 1968-04-02 Itek Corp Photosensitive cell
FR2285721A2 (en) * 1974-09-23 1976-04-16 Baldwin Co D H SOLAR BATTERY CONSTRUCTION PROCESS

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3376163A (en) * 1961-08-11 1968-04-02 Itek Corp Photosensitive cell
FR1446911A (en) * 1964-09-18 1966-07-22 Ass Elect Ind Improvements to the production processes of a cadmium sulphide layer
FR2285721A2 (en) * 1974-09-23 1976-04-16 Baldwin Co D H SOLAR BATTERY CONSTRUCTION PROCESS

Also Published As

Publication number Publication date
FR2447096B1 (en) 1983-04-29

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Legal Events

Date Code Title Description
ST Notification of lapse