FR2397756B1 - - Google Patents

Info

Publication number
FR2397756B1
FR2397756B1 FR7721464A FR7721464A FR2397756B1 FR 2397756 B1 FR2397756 B1 FR 2397756B1 FR 7721464 A FR7721464 A FR 7721464A FR 7721464 A FR7721464 A FR 7721464A FR 2397756 B1 FR2397756 B1 FR 2397756B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7721464A
Other versions
FR2397756A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUROP TELETRANSMISSION
Original Assignee
EUROP TELETRANSMISSION
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUROP TELETRANSMISSION filed Critical EUROP TELETRANSMISSION
Priority to FR7721464A priority Critical patent/FR2397756A1/fr
Priority to GB7829324A priority patent/GB2001494B/en
Priority to NL7807408A priority patent/NL7807408A/xx
Priority to DE19782830437 priority patent/DE2830437A1/de
Priority to JP8501478A priority patent/JPS5419632A/ja
Publication of FR2397756A1 publication Critical patent/FR2397756A1/fr
Application granted granted Critical
Publication of FR2397756B1 publication Critical patent/FR2397756B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Control Of Electrical Variables (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Filters That Use Time-Delay Elements (AREA)
FR7721464A 1977-07-12 1977-07-12 Filtre transversal a transfert de charges electriques Granted FR2397756A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7721464A FR2397756A1 (fr) 1977-07-12 1977-07-12 Filtre transversal a transfert de charges electriques
GB7829324A GB2001494B (en) 1977-07-12 1978-07-10 Devices for regulating the threshhold voltages of igfet transistors of integrated circuits
NL7807408A NL7807408A (nl) 1977-07-12 1978-07-10 Transversaal filter met overdracht van elektrische ladingen.
DE19782830437 DE2830437A1 (de) 1977-07-12 1978-07-11 Ladungsgekoppeltes filter
JP8501478A JPS5419632A (en) 1977-07-12 1978-07-12 Lateral charge transfer filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7721464A FR2397756A1 (fr) 1977-07-12 1977-07-12 Filtre transversal a transfert de charges electriques

Publications (2)

Publication Number Publication Date
FR2397756A1 FR2397756A1 (fr) 1979-02-09
FR2397756B1 true FR2397756B1 (fr) 1982-04-02

Family

ID=9193295

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7721464A Granted FR2397756A1 (fr) 1977-07-12 1977-07-12 Filtre transversal a transfert de charges electriques

Country Status (5)

Country Link
JP (1) JPS5419632A (fr)
DE (1) DE2830437A1 (fr)
FR (1) FR2397756A1 (fr)
GB (1) GB2001494B (fr)
NL (1) NL7807408A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414823A1 (fr) * 1978-01-13 1979-08-10 Thomson Csf Dispositif dephaseur a semi-conducteur et filtre a transfert de charges comportant un tel dispositif
FR2453543A1 (fr) * 1979-04-06 1980-10-31 Thomson Csf Filtre transversal a transfert de charges electriques
DE2939513A1 (de) * 1979-09-28 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Ctd-transversalfilter mit mehreren parallelgeschalteten eingangsstufen und verfahren zu seinem betrieb
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
JP2805210B2 (ja) * 1989-06-09 1998-09-30 日本テキサス・インスツルメンツ株式会社 昇圧回路

Also Published As

Publication number Publication date
GB2001494A (en) 1979-01-31
GB2001494B (en) 1982-01-13
NL7807408A (nl) 1979-01-16
JPS5419632A (en) 1979-02-14
DE2830437A1 (de) 1979-01-18
FR2397756A1 (fr) 1979-02-09

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Legal Events

Date Code Title Description
ST Notification of lapse