FR2377224A2 - METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS - Google Patents

METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS

Info

Publication number
FR2377224A2
FR2377224A2 FR7701014A FR7701014A FR2377224A2 FR 2377224 A2 FR2377224 A2 FR 2377224A2 FR 7701014 A FR7701014 A FR 7701014A FR 7701014 A FR7701014 A FR 7701014A FR 2377224 A2 FR2377224 A2 FR 2377224A2
Authority
FR
France
Prior art keywords
single crystals
manufacture
doping
doping single
material used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7701014A
Other languages
French (fr)
Other versions
FR2377224B2 (en
Inventor
Jean Ricard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Produits Chimiques Ugine Kuhlmann
Ugine Kuhlmann SA
Original Assignee
Produits Chimiques Ugine Kuhlmann
Ugine Kuhlmann SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Produits Chimiques Ugine Kuhlmann, Ugine Kuhlmann SA filed Critical Produits Chimiques Ugine Kuhlmann
Priority to FR7701014A priority Critical patent/FR2377224A2/en
Priority to DE19772704043 priority patent/DE2704043C2/en
Priority to CH127777A priority patent/CH619007A5/en
Priority to GB424277A priority patent/GB1572914A/en
Priority to JP1170877A priority patent/JPS6018636B2/en
Priority to IT6727177A priority patent/IT1116306B/en
Publication of FR2377224A2 publication Critical patent/FR2377224A2/en
Application granted granted Critical
Publication of FR2377224B2 publication Critical patent/FR2377224B2/fr
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08Downward pulling
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Procédé de fabrication en continu de monocristaux préformés à dopage multiple, par la méthode de la goutte pendante, dans lequel on fait varier en cours de fabrication la composition de la matière servant à fabriquer le monocristal. Dispositif permettant la réalisation de ce procédé comportant un système d'alimentation multiple de la matière servant à fabriquer le monocristal comportant au moins deux réservoirs indépendants. Les monocristaux à dopage variable de la présente invention trouvent de nombreuses applications notamment en électronique.Process for the continuous manufacture of preformed single crystals with multiple doping, by the hanging drop method, in which the composition of the material used to manufacture the single crystal is varied during manufacture. Device for carrying out this process comprising a multiple supply system for the material used to manufacture the single crystal comprising at least two independent reservoirs. The variable doping single crystals of the present invention find numerous applications, in particular in electronics.

FR7701014A 1977-01-14 1977-01-14 METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS Granted FR2377224A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7701014A FR2377224A2 (en) 1977-01-14 1977-01-14 METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS
DE19772704043 DE2704043C2 (en) 1977-01-14 1977-02-01 Method and device for the continuous growth of multiply doped single crystals
CH127777A CH619007A5 (en) 1977-01-14 1977-02-02 Process and device for the manufacture of preformed single crystals with multiple doping
GB424277A GB1572914A (en) 1977-01-14 1977-02-02 Process and apparatus for producing multi-doped preformed monocrystals
JP1170877A JPS6018636B2 (en) 1977-01-14 1977-02-07 Continuous production method of single crystal with predetermined shape and doping agent added in multiple ways and apparatus therefor
IT6727177A IT1116306B (en) 1977-01-14 1977-02-07 PROCEDURE AND DEVICE FOR THE PRODUCTION OF PREFORMED MONOCRYSTALS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7701014A FR2377224A2 (en) 1977-01-14 1977-01-14 METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS

Publications (2)

Publication Number Publication Date
FR2377224A2 true FR2377224A2 (en) 1978-08-11
FR2377224B2 FR2377224B2 (en) 1981-06-12

Family

ID=9185495

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7701014A Granted FR2377224A2 (en) 1977-01-14 1977-01-14 METHOD AND DEVICE FOR MANUFACTURING PREFORMED MULTI-DOPING SINGLE CRYSTALS

Country Status (6)

Country Link
JP (1) JPS6018636B2 (en)
CH (1) CH619007A5 (en)
DE (1) DE2704043C2 (en)
FR (1) FR2377224A2 (en)
GB (1) GB1572914A (en)
IT (1) IT1116306B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8005312A (en) * 1980-09-24 1982-04-16 Philips Nv METHOD FOR MANUFACTURING FERRITE SINGLE CRYSTALS
JPS59165470U (en) * 1984-02-29 1984-11-06 ケイディディ株式会社 Single crystal manufacturing equipment
WO1986006764A1 (en) * 1985-05-17 1986-11-20 J.C. Schumacher Company Continuously pulled single crystal silicon ingots
DE19936651A1 (en) * 1999-08-04 2001-02-15 Forsch Mineralische Und Metall Process and production of a segmented crystal

Also Published As

Publication number Publication date
GB1572914A (en) 1980-08-06
FR2377224B2 (en) 1981-06-12
DE2704043C2 (en) 1983-09-01
JPS6018636B2 (en) 1985-05-11
CH619007A5 (en) 1980-08-29
JPS5389890A (en) 1978-08-08
DE2704043A1 (en) 1978-07-20
IT1116306B (en) 1986-02-10

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