FR2374741A1 - DOUBLE SLOT ELECTRODE FOR CHARGE TRANSFER DEVICE - Google Patents

DOUBLE SLOT ELECTRODE FOR CHARGE TRANSFER DEVICE

Info

Publication number
FR2374741A1
FR2374741A1 FR7737543A FR7737543A FR2374741A1 FR 2374741 A1 FR2374741 A1 FR 2374741A1 FR 7737543 A FR7737543 A FR 7737543A FR 7737543 A FR7737543 A FR 7737543A FR 2374741 A1 FR2374741 A1 FR 2374741A1
Authority
FR
France
Prior art keywords
transfer device
charge transfer
charge
electrode
slot electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7737543A
Other languages
French (fr)
Other versions
FR2374741B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of FR2374741A1 publication Critical patent/FR2374741A1/en
Application granted granted Critical
Publication of FR2374741B1 publication Critical patent/FR2374741B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76891—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)

Abstract

La présente invention concerne une électrode à double fente pour un dispositif à transfert de charges. Ce dispositif à transfert de charges est obtenu en utilisant des électrodes à double fente 12F, 12F', 12F'' contrairement à une électrode classique à simple fente (par exemple 12D, 12D'). La charge transférée en dessous de l'électrode à double fente est détectée différentiellement au niveau de deux segments seulement. La partie de la charge totale se trouvant en dessous du troisième segment est simultanément transféré de façon à maintenir une densité de charge uniforme en dessous de l'électrode dans son ensemble. Application à des filtres transverses dans lesquels une détection différentielle relativement faible est effectuée.The present invention relates to a double slit electrode for a charge transfer device. This charge transfer device is obtained by using double slit electrodes 12F, 12F ', 12F' 'unlike a conventional single slit electrode (for example 12D, 12D'). The charge transferred below the double slit electrode is differentially detected at only two segments. The part of the total charge lying below the third segment is simultaneously transferred so as to maintain a uniform charge density below the electrode as a whole. Application to transverse filters in which a relatively low differential detection is performed.

FR7737543A 1976-12-17 1977-12-13 DOUBLE SLOT ELECTRODE FOR CHARGE TRANSFER DEVICE Granted FR2374741A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA268,093A CA1080355A (en) 1976-12-17 1976-12-17 Double split-electrode for charge transfer device

Publications (2)

Publication Number Publication Date
FR2374741A1 true FR2374741A1 (en) 1978-07-13
FR2374741B1 FR2374741B1 (en) 1983-01-28

Family

ID=4107524

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7737543A Granted FR2374741A1 (en) 1976-12-17 1977-12-13 DOUBLE SLOT ELECTRODE FOR CHARGE TRANSFER DEVICE

Country Status (7)

Country Link
JP (1) JPS5375878A (en)
CA (1) CA1080355A (en)
DE (1) DE2755493A1 (en)
FR (1) FR2374741A1 (en)
GB (1) GB1552545A (en)
NL (1) NL7712907A (en)
SE (1) SE415615B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2453470A1 (en) * 1979-04-06 1980-10-31 Thomson Csf DEVICE FOR READING AND INJECTING ELECTRIC CHARGES AND APPLICATION OF SUCH A DEVICE

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819958A (en) * 1972-11-03 1974-06-25 Texas Instruments Inc Charge transfer device analog matched filter
FR2302636A1 (en) * 1975-02-28 1976-09-24 Thomson Csf ANALOGUE SIGNAL FILTERING PROCESS

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819958A (en) * 1972-11-03 1974-06-25 Texas Instruments Inc Charge transfer device analog matched filter
FR2302636A1 (en) * 1975-02-28 1976-09-24 Thomson Csf ANALOGUE SIGNAL FILTERING PROCESS

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/76 *

Also Published As

Publication number Publication date
GB1552545A (en) 1979-09-12
DE2755493A1 (en) 1978-06-22
CA1080355A (en) 1980-06-24
SE7714368L (en) 1978-06-18
JPS6135722B2 (en) 1986-08-14
NL7712907A (en) 1978-06-20
FR2374741B1 (en) 1983-01-28
SE415615B (en) 1980-10-13
JPS5375878A (en) 1978-07-05

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Legal Events

Date Code Title Description
ST Notification of lapse