FR2373879B1 - - Google Patents

Info

Publication number
FR2373879B1
FR2373879B1 FR7636786A FR7636786A FR2373879B1 FR 2373879 B1 FR2373879 B1 FR 2373879B1 FR 7636786 A FR7636786 A FR 7636786A FR 7636786 A FR7636786 A FR 7636786A FR 2373879 B1 FR2373879 B1 FR 2373879B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7636786A
Other languages
French (fr)
Other versions
FR2373879A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7636786A priority Critical patent/FR2373879A1/en
Publication of FR2373879A1 publication Critical patent/FR2373879A1/en
Application granted granted Critical
Publication of FR2373879B1 publication Critical patent/FR2373879B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
FR7636786A 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness Granted FR2373879A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7636786A FR2373879A1 (en) 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7636786A FR2373879A1 (en) 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Publications (2)

Publication Number Publication Date
FR2373879A1 FR2373879A1 (en) 1978-07-07
FR2373879B1 true FR2373879B1 (en) 1980-02-08

Family

ID=9180741

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7636786A Granted FR2373879A1 (en) 1976-12-07 1976-12-07 Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness

Country Status (1)

Country Link
FR (1) FR2373879A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
DE3067381D1 (en) * 1979-11-15 1984-05-10 Secr Defence Brit Series-connected combination of two-terminal semiconductor devices and their fabrication
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
GB2237143A (en) * 1989-09-15 1991-04-24 Philips Electronic Associated Two-terminal non-linear devices and their fabrication
GB2368970A (en) * 2000-06-28 2002-05-15 Marconi Applied Techn Ltd Semiconductor packaging

Also Published As

Publication number Publication date
FR2373879A1 (en) 1978-07-07

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Legal Events

Date Code Title Description
ST Notification of lapse