FR2365888B1 - - Google Patents

Info

Publication number
FR2365888B1
FR2365888B1 FR7629105A FR7629105A FR2365888B1 FR 2365888 B1 FR2365888 B1 FR 2365888B1 FR 7629105 A FR7629105 A FR 7629105A FR 7629105 A FR7629105 A FR 7629105A FR 2365888 B1 FR2365888 B1 FR 2365888B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7629105A
Other languages
French (fr)
Other versions
FR2365888A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7629105A priority Critical patent/FR2365888A1/fr
Priority to US05/835,776 priority patent/US4167806A/en
Priority to GB39926/77A priority patent/GB1592304A/en
Priority to DE19772743641 priority patent/DE2743641A1/de
Priority to JP11654477A priority patent/JPS5342573A/ja
Publication of FR2365888A1 publication Critical patent/FR2365888A1/fr
Application granted granted Critical
Publication of FR2365888B1 publication Critical patent/FR2365888B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR7629105A 1976-09-28 1976-09-28 Procede de realisation de dispositifs semi-conducteurs amorphes et dispositifs en faisant application Granted FR2365888A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7629105A FR2365888A1 (fr) 1976-09-28 1976-09-28 Procede de realisation de dispositifs semi-conducteurs amorphes et dispositifs en faisant application
US05/835,776 US4167806A (en) 1976-09-28 1977-09-22 Method of fabrication of an amorphous semiconductor device on a substrate
GB39926/77A GB1592304A (en) 1976-09-28 1977-09-26 Method of manufacture of amorphous semi-conductor devices and to devices obtained as a result of the application of said method
DE19772743641 DE2743641A1 (de) 1976-09-28 1977-09-28 Verfahren und vorrichtung zum herstellen von amorphen halbleitervorrichtungen
JP11654477A JPS5342573A (en) 1976-09-28 1977-09-28 Method of producing amorphous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7629105A FR2365888A1 (fr) 1976-09-28 1976-09-28 Procede de realisation de dispositifs semi-conducteurs amorphes et dispositifs en faisant application

Publications (2)

Publication Number Publication Date
FR2365888A1 FR2365888A1 (fr) 1978-04-21
FR2365888B1 true FR2365888B1 (ja) 1980-03-21

Family

ID=9178156

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7629105A Granted FR2365888A1 (fr) 1976-09-28 1976-09-28 Procede de realisation de dispositifs semi-conducteurs amorphes et dispositifs en faisant application

Country Status (1)

Country Link
FR (1) FR2365888A1 (ja)

Also Published As

Publication number Publication date
FR2365888A1 (fr) 1978-04-21

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Legal Events

Date Code Title Description
ST Notification of lapse