FR2365819A1 - Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face - Google Patents

Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face

Info

Publication number
FR2365819A1
FR2365819A1 FR7628852A FR7628852A FR2365819A1 FR 2365819 A1 FR2365819 A1 FR 2365819A1 FR 7628852 A FR7628852 A FR 7628852A FR 7628852 A FR7628852 A FR 7628852A FR 2365819 A1 FR2365819 A1 FR 2365819A1
Authority
FR
France
Prior art keywords
semiconductor element
surface field
electron
optical frequency
modulated surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7628852A
Other languages
French (fr)
Other versions
FR2365819B1 (en
Inventor
Michel Savelli
Claude Alibert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7628852A priority Critical patent/FR2365819A1/en
Publication of FR2365819A1 publication Critical patent/FR2365819A1/en
Application granted granted Critical
Publication of FR2365819B1 publication Critical patent/FR2365819B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The electro-optical modulator using a monochromatic light beam, e.g. from a laser, uses a semiconductor element (10) in which a hyper frequency oscillation is established. This causes a modulated surface field, over the face (11) of the semiconductor element (10) onto which the light beam (Ii) is directed. The semiconductor material is such that one inter band transition is of the same order as the photon energy of the light beam. The semiconductor element (10) may be an IMPATT or TRAPATT Gunn diode, with an oscillation at a frequency of 1 Giga Hertz set up when a voltage above 8 volts is applied, with a superimposed modulation voltage provided by a 5 volt source (13) at a frequency of 100 Mega Hertz.
FR7628852A 1976-09-24 1976-09-24 Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face Granted FR2365819A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7628852A FR2365819A1 (en) 1976-09-24 1976-09-24 Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7628852A FR2365819A1 (en) 1976-09-24 1976-09-24 Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face

Publications (2)

Publication Number Publication Date
FR2365819A1 true FR2365819A1 (en) 1978-04-21
FR2365819B1 FR2365819B1 (en) 1979-01-12

Family

ID=9178068

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7628852A Granted FR2365819A1 (en) 1976-09-24 1976-09-24 Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face

Country Status (1)

Country Link
FR (1) FR2365819A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1477570A (en) * 1966-02-25 1967-04-21 Radiotechnique Coprim Rtc Method and device for modulating a beam of light
FR1505628A (en) * 1965-11-15 1967-12-15 Western Electric Co Light modulators

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1505628A (en) * 1965-11-15 1967-12-15 Western Electric Co Light modulators
FR1477570A (en) * 1966-02-25 1967-04-21 Radiotechnique Coprim Rtc Method and device for modulating a beam of light

Also Published As

Publication number Publication date
FR2365819B1 (en) 1979-01-12

Similar Documents

Publication Publication Date Title
US5434693A (en) Optical short pulse generating device
US3301625A (en) Semiconductor light modulators
CA2088330C (en) Optical pulse generator
US3973216A (en) Laser with a high frequency rate of modulation
US4485474A (en) Injection laser modulator with external resonator
US3961841A (en) Optical pulse position modulator
US3475078A (en) Gunn-effect light modulator
US3976873A (en) Tunable electroabsorptive detector
US3555455A (en) Method and apparatus for optical modulating a light signal
Maeda et al. All-optical triode based on a tandem wavelength converter using reflective semiconductor optical amplifiers
US3663897A (en) Method of modulating a laser beam and related apparatus
FR2365819A1 (en) Electron=optical frequency modulator for monochromatic beam - uses semiconductor element exhibiting modulated surface field across incident face
DE3681164D1 (en) OPTOELECTRONIC VOLTAGE CONTROLLED MODULATOR.
EP1011011A1 (en) Mach-Zehnder modulator with very high extinction ratio
US5825791A (en) Variable coherence length high brightness laser architecture
GB1102749A (en) A light modulator arrangement
US3483487A (en) Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning
SU398153A1 (en) Light modulator
GB776129A (en) Improvements in or relating to secret signalling systems
US3546632A (en) Method for converting an amplitude modulated electrical signal into a frequency modulated electrical signal
DE69321913D1 (en) Optical component and optoelectronic element for increasing the frequency of electromagnetic radiation
JPS60235543A (en) Optical phase modulating method
JPS5552022A (en) Light modulating device
GB1256550A (en)
GB1267085A (en)

Legal Events

Date Code Title Description
ST Notification of lapse