FR2363897B1 - - Google Patents

Info

Publication number
FR2363897B1
FR2363897B1 FR7626778A FR7626778A FR2363897B1 FR 2363897 B1 FR2363897 B1 FR 2363897B1 FR 7626778 A FR7626778 A FR 7626778A FR 7626778 A FR7626778 A FR 7626778A FR 2363897 B1 FR2363897 B1 FR 2363897B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7626778A
Other languages
French (fr)
Other versions
FR2363897A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7626778A priority Critical patent/FR2363897A1/fr
Publication of FR2363897A1 publication Critical patent/FR2363897A1/fr
Application granted granted Critical
Publication of FR2363897B1 publication Critical patent/FR2363897B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7626778A 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions Granted FR2363897A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7626778A FR2363897A1 (fr) 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7626778A FR2363897A1 (fr) 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Publications (2)

Publication Number Publication Date
FR2363897A1 FR2363897A1 (fr) 1978-03-31
FR2363897B1 true FR2363897B1 (ru) 1979-01-12

Family

ID=9177403

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626778A Granted FR2363897A1 (fr) 1976-09-06 1976-09-06 Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions

Country Status (1)

Country Link
FR (1) FR2363897A1 (ru)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof
NL7902632A (nl) * 1979-04-04 1980-10-07 Philips Nv Transistorschakelaar.
JPS60126919A (ja) * 1983-12-14 1985-07-06 Toshiba Corp ダ−リントントランジスタ回路
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
DE4207349A1 (de) * 1992-03-07 1993-09-09 Telefunken Microelectron Leistungs-spannungsbegrenzungsschaltung
WO2004079789A2 (en) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Interstage isolation in darlington transistors

Also Published As

Publication number Publication date
FR2363897A1 (fr) 1978-03-31

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Legal Events

Date Code Title Description
ST Notification of lapse