FR2351065A1 - GLASS FOR THE PASSIVATION OF SEMICONDUCTOR DEVICES - Google Patents
GLASS FOR THE PASSIVATION OF SEMICONDUCTOR DEVICESInfo
- Publication number
- FR2351065A1 FR2351065A1 FR7714208A FR7714208A FR2351065A1 FR 2351065 A1 FR2351065 A1 FR 2351065A1 FR 7714208 A FR7714208 A FR 7714208A FR 7714208 A FR7714208 A FR 7714208A FR 2351065 A1 FR2351065 A1 FR 2351065A1
- Authority
- FR
- France
- Prior art keywords
- passivation
- glass
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7604951A NL7604951A (en) | 1976-05-10 | 1976-05-10 | GLASS FOR PASSIVING SEMICONDUCTOR DEVICES. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2351065A1 true FR2351065A1 (en) | 1977-12-09 |
FR2351065B1 FR2351065B1 (en) | 1980-03-28 |
Family
ID=19826155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7714208A Granted FR2351065A1 (en) | 1976-05-10 | 1977-05-10 | GLASS FOR THE PASSIVATION OF SEMICONDUCTOR DEVICES |
Country Status (11)
Country | Link |
---|---|
US (1) | US4156250A (en) |
JP (1) | JPS596269B2 (en) |
AU (1) | AU508674B2 (en) |
BE (1) | BE854424A (en) |
CA (1) | CA1075271A (en) |
DE (1) | DE2720639C2 (en) |
FR (1) | FR2351065A1 (en) |
GB (1) | GB1568156A (en) |
IT (1) | IT1085541B (en) |
NL (1) | NL7604951A (en) |
SE (1) | SE428293B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2423866A1 (en) * | 1978-04-18 | 1979-11-16 | Westinghouse Electric Corp | DIODE ENCAPSULATED IN GLASS |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2410366A1 (en) * | 1977-11-29 | 1979-06-22 | Radiotechnique Compelec | MESA TYPE TRANSISTOR AND METHOD FOR MAKING THIS TRANSISTOR |
JPS55133569A (en) * | 1979-04-06 | 1980-10-17 | Hitachi Ltd | Semiconductor device |
JPS55160437A (en) * | 1979-05-31 | 1980-12-13 | Hitachi Ltd | Semiconductor device |
US4490737A (en) * | 1981-03-16 | 1984-12-25 | Fairchild Camera & Instrument Corp. | Smooth glass insulating film over interconnects on an integrated circuit |
FR2542148B1 (en) * | 1983-03-01 | 1986-12-05 | Telemecanique Electrique | CONTROL CIRCUIT OF A THYRISTOR OR TRIAC TYPE SENSITIVE SEMICONDUCTOR DEVICE WITH SELF-IGNITION ASSISTANCE IMPEDANCE AND ITS APPLICATION TO THE PRODUCTION OF A SWITCH ASSEMBLY COMBINING A SENSITIVE THYRISTOR WITH A LESS SENSITIVE THYRISTOR |
DE3331298A1 (en) * | 1983-08-31 | 1985-03-14 | Brown, Boveri & Cie Ag, 6800 Mannheim | POWER THYRISTOR ON A SUBSTRATE |
KR970000416B1 (en) * | 1985-05-31 | 1997-01-09 | 사이언티픽 이매징 테크놀로지시 이코포레이티드 | Silicon wafer reinforcing materials |
US4946716A (en) * | 1985-05-31 | 1990-08-07 | Tektronix, Inc. | Method of thinning a silicon wafer using a reinforcing material |
CN1298029C (en) * | 2003-03-26 | 2007-01-31 | 中国电子科技集团公司第五十五研究所 | RF desk-top silicon diode electrophoretic depositional glass conformal passivation film manufacture |
CN115943128A (en) * | 2020-10-13 | 2023-04-07 | 日本电气硝子株式会社 | Glass for coating semiconductor element and material for coating semiconductor using same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3241010A (en) * | 1962-03-23 | 1966-03-15 | Texas Instruments Inc | Semiconductor junction passivation |
US3542572A (en) * | 1968-06-24 | 1970-11-24 | Corning Glass Works | Germania-silica glasses |
US3801878A (en) * | 1971-03-09 | 1974-04-02 | Innotech Corp | Glass switching device using an ion impermeable glass active layer |
US4073654A (en) * | 1975-12-15 | 1978-02-14 | Corning Glass Works | Optical articles prepared from hydrated glasses |
-
1976
- 1976-05-10 NL NL7604951A patent/NL7604951A/en not_active Application Discontinuation
-
1977
- 1977-05-04 US US05/793,881 patent/US4156250A/en not_active Expired - Lifetime
- 1977-05-04 CA CA277,712A patent/CA1075271A/en not_active Expired
- 1977-05-06 IT IT23302/77A patent/IT1085541B/en active
- 1977-05-06 AU AU24963/77A patent/AU508674B2/en not_active Expired
- 1977-05-06 GB GB19071/77A patent/GB1568156A/en not_active Expired
- 1977-05-07 DE DE2720639A patent/DE2720639C2/en not_active Expired
- 1977-05-09 BE BE177409A patent/BE854424A/en unknown
- 1977-05-09 JP JP52052153A patent/JPS596269B2/en not_active Expired
- 1977-05-09 SE SE7705357A patent/SE428293B/en not_active IP Right Cessation
- 1977-05-10 FR FR7714208A patent/FR2351065A1/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2423866A1 (en) * | 1978-04-18 | 1979-11-16 | Westinghouse Electric Corp | DIODE ENCAPSULATED IN GLASS |
Also Published As
Publication number | Publication date |
---|---|
FR2351065B1 (en) | 1980-03-28 |
CA1075271A (en) | 1980-04-08 |
US4156250A (en) | 1979-05-22 |
DE2720639C2 (en) | 1984-01-19 |
JPS52136211A (en) | 1977-11-14 |
NL7604951A (en) | 1977-11-14 |
IT1085541B (en) | 1985-05-28 |
AU508674B2 (en) | 1980-03-27 |
SE7705357L (en) | 1977-11-11 |
BE854424A (en) | 1977-11-09 |
GB1568156A (en) | 1980-05-29 |
AU2496377A (en) | 1978-11-09 |
DE2720639A1 (en) | 1977-12-01 |
JPS596269B2 (en) | 1984-02-09 |
SE428293B (en) | 1983-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR7900229A (en) | SEMICONDUCTOR DEVICE | |
FR2312364A1 (en) | DEVICE FOR THE MANUFACTURING OF BUFFERS | |
FR2302646A1 (en) | DEVICE FOR THE | |
BR8008860A (en) | SEMICONDUCTOR DEVICES CONTROLLED BY DEPLECTION REGIONS | |
FR2334640A1 (en) | CONTACT LENS GLASS | |
FR2299816A1 (en) | DEVICE FOR INCISING THE REGION | |
SE7900083L (en) | SEMICONDUCTOR DEVICE | |
FR2307281A1 (en) | PROCESS AND DEVICE FOR THE TECHNICAL MANUFACTURING OF PREVETUS OBJECT HOLDERS | |
FR2300361A1 (en) | DEVICE FOR | |
BR7808124A (en) | SEMICONDUCTOR DEVICE | |
FR2351065A1 (en) | GLASS FOR THE PASSIVATION OF SEMICONDUCTOR DEVICES | |
BR7705488A (en) | SEMICONDUCTOR DEVICE | |
FR2487582B1 (en) | SEMICONDUCTOR DEVICE OF THE SEMICONDUCTOR METAL-OXIDE TYPE | |
BR7702421A (en) | SEMICONDUCTOR TRANSDUCER | |
GB1542084A (en) | Thin silicon semiconductor devices | |
BE861465A (en) | DEVICE FOR THE MANUFACTURE OF LAMINATED RADIOGRAPHIES | |
SE7902980L (en) | SEMICONDUCTOR DEVICE | |
FR2297271A1 (en) | DEVICE FOR THE MANUFACTURE OF TABLECLOTH MATERIAL | |
BR7800627A (en) | SEMICONDUCTOR DEVICE | |
FR2308600A1 (en) | EQUIPMENT FOR THE MANUFACTURE OF THERMO-REFLECTOR GLASS | |
IT1063263B (en) | DEVICE FOR THE DEPOSITION OF SEMICONDUCTOR MATERIAL | |
BE866410R (en) | DEVICE FOR THE MANUFACTURE OF LAMINATED RADIOGRAPHIES | |
FR2299750A1 (en) | SAFETY DEVICE FOR THE | |
FR2321625A1 (en) | NUT LOCKING DEVICE | |
IT1105416B (en) | DEVICE FOR THE TRANSPORT OF BOTTLES |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |