FR2341943B1 - - Google Patents
Info
- Publication number
- FR2341943B1 FR2341943B1 FR7604758A FR7604758A FR2341943B1 FR 2341943 B1 FR2341943 B1 FR 2341943B1 FR 7604758 A FR7604758 A FR 7604758A FR 7604758 A FR7604758 A FR 7604758A FR 2341943 B1 FR2341943 B1 FR 2341943B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7604758A FR2341943A1 (fr) | 1976-02-20 | 1976-02-20 | Procede de realisation de transistors par implantation ionique |
DE19772705468 DE2705468A1 (de) | 1976-02-20 | 1977-02-10 | Verfahren zur herstellung von transistoren durch ionenimplantation |
US05/767,570 US4106954A (en) | 1976-02-20 | 1977-02-10 | Method of manufacturing transistors by means of ion implantation |
CA271,749A CA1078530A (fr) | 1976-02-20 | 1977-02-14 | Methode de fabrication de transistors par implantation d'ions |
NL7701596A NL7701596A (nl) | 1976-02-20 | 1977-02-16 | Werkwijze voor de vervaardiging van transis- toren door middel van ionenimplantatie. |
IT20411/77A IT1074827B (it) | 1976-02-20 | 1977-02-17 | Metodo di fabbricazione di transistori per mezzo di una fase di impiantagione ionica |
GB6666/77A GB1573760A (en) | 1976-02-20 | 1977-02-17 | Transistor manufacture |
JP1768277A JPS52119083A (en) | 1976-02-20 | 1977-02-19 | Method of producing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7604758A FR2341943A1 (fr) | 1976-02-20 | 1976-02-20 | Procede de realisation de transistors par implantation ionique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2341943A1 FR2341943A1 (fr) | 1977-09-16 |
FR2341943B1 true FR2341943B1 (fr) | 1980-10-17 |
Family
ID=9169404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7604758A Granted FR2341943A1 (fr) | 1976-02-20 | 1976-02-20 | Procede de realisation de transistors par implantation ionique |
Country Status (8)
Country | Link |
---|---|
US (1) | US4106954A (fr) |
JP (1) | JPS52119083A (fr) |
CA (1) | CA1078530A (fr) |
DE (1) | DE2705468A1 (fr) |
FR (1) | FR2341943A1 (fr) |
GB (1) | GB1573760A (fr) |
IT (1) | IT1074827B (fr) |
NL (1) | NL7701596A (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2755418A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Verfahren zur herstellung eines halbleiter-bauelements |
US4243435A (en) * | 1979-06-22 | 1981-01-06 | International Business Machines Corporation | Bipolar transistor fabrication process with an ion implanted emitter |
US4242791A (en) * | 1979-09-21 | 1981-01-06 | International Business Machines Corporation | High performance bipolar transistors fabricated by post emitter base implantation process |
US4257826A (en) * | 1979-10-11 | 1981-03-24 | Texas Instruments Incorporated | Photoresist masking in manufacture of semiconductor device |
JPS57149770A (en) * | 1981-03-11 | 1982-09-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
EP0062725B1 (fr) * | 1981-04-14 | 1984-09-12 | Deutsche ITT Industries GmbH | Procédé pour la fabrication d'un transistor planaire intégré |
FR2506076A1 (fr) * | 1981-05-12 | 1982-11-19 | Efcis | Procede de fabrication de circuits integres de type mos |
EP0133339A3 (fr) * | 1983-07-29 | 1985-03-20 | Trw Inc. | Transistor bipolaire à contacts en siliciure et procédé de fabrication d'un tel transistor |
US4573256A (en) * | 1983-08-26 | 1986-03-04 | International Business Machines Corporation | Method for making a high performance transistor integrated circuit |
US4648909A (en) * | 1984-11-28 | 1987-03-10 | Fairchild Semiconductor Corporation | Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits |
US4662061A (en) * | 1985-02-27 | 1987-05-05 | Texas Instruments Incorporated | Method for fabricating a CMOS well structure |
US4748103A (en) * | 1986-03-21 | 1988-05-31 | Advanced Power Technology | Mask-surrogate semiconductor process employing dopant protective region |
US6057214A (en) * | 1996-12-09 | 2000-05-02 | Texas Instruments Incorporated | Silicon-on-insulation trench isolation structure and method for forming |
US7067383B2 (en) * | 2004-03-08 | 2006-06-27 | Intersil Americas, Inc. | Method of making bipolar transistors and resulting product |
US8921149B2 (en) * | 2010-03-04 | 2014-12-30 | Varian Semiconductor Equipment Associates, Inc. | Aligning successive implants with a soft mask |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3595716A (en) * | 1968-05-16 | 1971-07-27 | Philips Corp | Method of manufacturing semiconductor devices |
GB1332932A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
JPS5137465B2 (fr) * | 1971-09-13 | 1976-10-15 | ||
US3852119A (en) * | 1972-11-14 | 1974-12-03 | Texas Instruments Inc | Metal-insulator-semiconductor structures having reduced junction capacitance and method of fabrication |
US4025364A (en) * | 1975-08-11 | 1977-05-24 | Fairchild Camera And Instrument Corporation | Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases |
-
1976
- 1976-02-20 FR FR7604758A patent/FR2341943A1/fr active Granted
-
1977
- 1977-02-10 DE DE19772705468 patent/DE2705468A1/de not_active Withdrawn
- 1977-02-10 US US05/767,570 patent/US4106954A/en not_active Expired - Lifetime
- 1977-02-14 CA CA271,749A patent/CA1078530A/fr not_active Expired
- 1977-02-16 NL NL7701596A patent/NL7701596A/xx active Search and Examination
- 1977-02-17 GB GB6666/77A patent/GB1573760A/en not_active Expired
- 1977-02-17 IT IT20411/77A patent/IT1074827B/it active
- 1977-02-19 JP JP1768277A patent/JPS52119083A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS52119083A (en) | 1977-10-06 |
DE2705468A1 (de) | 1977-08-25 |
US4106954A (en) | 1978-08-15 |
GB1573760A (en) | 1980-08-28 |
NL7701596A (nl) | 1977-08-23 |
CA1078530A (fr) | 1980-05-27 |
FR2341943A1 (fr) | 1977-09-16 |
IT1074827B (it) | 1985-04-20 |
JPS5729856B2 (fr) | 1982-06-25 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |