FR2339956A1 - Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede - Google Patents
Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procedeInfo
- Publication number
- FR2339956A1 FR2339956A1 FR7602588A FR7602588A FR2339956A1 FR 2339956 A1 FR2339956 A1 FR 2339956A1 FR 7602588 A FR7602588 A FR 7602588A FR 7602588 A FR7602588 A FR 7602588A FR 2339956 A1 FR2339956 A1 FR 2339956A1
- Authority
- FR
- France
- Prior art keywords
- contacts
- semiconductor
- making
- metal
- large injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P76/2042—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H10D64/0116—
-
- H10D64/0124—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H10P50/20—
-
- H10P76/2045—
-
- H10P95/50—
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7602588A FR2339956A1 (fr) | 1976-01-30 | 1976-01-30 | Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede |
| GB3434/77A GB1539294A (en) | 1976-01-30 | 1977-01-27 | Method of manufacturing metal-semiconductor contacts exhibiting high injected current density and devices obtained by said method |
| DE19772703322 DE2703322A1 (de) | 1976-01-30 | 1977-01-27 | Verfahren zur herstellung von metall-halbleiter-kontakten mit grosser strominjektionsdichte |
| JP960777A JPS5294071A (en) | 1976-01-30 | 1977-01-31 | Method of making contact between metal and semiconductor injected with high density current |
| US06/083,230 US4307131A (en) | 1976-01-30 | 1979-10-10 | Method of manufacturing metal-semiconductor contacts exhibiting high injected current density |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7602588A FR2339956A1 (fr) | 1976-01-30 | 1976-01-30 | Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2339956A1 true FR2339956A1 (fr) | 1977-08-26 |
| FR2339956B1 FR2339956B1 (OSRAM) | 1979-07-13 |
Family
ID=9168581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7602588A Granted FR2339956A1 (fr) | 1976-01-30 | 1976-01-30 | Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5294071A (OSRAM) |
| DE (1) | DE2703322A1 (OSRAM) |
| FR (1) | FR2339956A1 (OSRAM) |
| GB (1) | GB1539294A (OSRAM) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2005564A1 (OSRAM) * | 1968-04-04 | 1969-12-12 | Fujitsu Ltd | |
| FR2081829A1 (OSRAM) * | 1970-03-10 | 1971-12-10 | Westinghouse Electric Corp |
-
1976
- 1976-01-30 FR FR7602588A patent/FR2339956A1/fr active Granted
-
1977
- 1977-01-27 DE DE19772703322 patent/DE2703322A1/de not_active Withdrawn
- 1977-01-27 GB GB3434/77A patent/GB1539294A/en not_active Expired
- 1977-01-31 JP JP960777A patent/JPS5294071A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2005564A1 (OSRAM) * | 1968-04-04 | 1969-12-12 | Fujitsu Ltd | |
| FR2081829A1 (OSRAM) * | 1970-03-10 | 1971-12-10 | Westinghouse Electric Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1539294A (en) | 1979-01-31 |
| DE2703322A1 (de) | 1977-08-04 |
| FR2339956B1 (OSRAM) | 1979-07-13 |
| JPS5294071A (en) | 1977-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |