FR2339953A1 - Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes - Google Patents

Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes

Info

Publication number
FR2339953A1
FR2339953A1 FR7603010A FR7603010A FR2339953A1 FR 2339953 A1 FR2339953 A1 FR 2339953A1 FR 7603010 A FR7603010 A FR 7603010A FR 7603010 A FR7603010 A FR 7603010A FR 2339953 A1 FR2339953 A1 FR 2339953A1
Authority
FR
France
Prior art keywords
wafer
diodes
films
etching
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7603010A
Other languages
English (en)
French (fr)
Other versions
FR2339953B1 (enExample
Inventor
Anne Tetefort
Francois Vazeille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7603010A priority Critical patent/FR2339953A1/fr
Publication of FR2339953A1 publication Critical patent/FR2339953A1/fr
Application granted granted Critical
Publication of FR2339953B1 publication Critical patent/FR2339953B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
FR7603010A 1976-01-29 1976-01-29 Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes Granted FR2339953A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7603010A FR2339953A1 (fr) 1976-01-29 1976-01-29 Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7603010A FR2339953A1 (fr) 1976-01-29 1976-01-29 Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes

Publications (2)

Publication Number Publication Date
FR2339953A1 true FR2339953A1 (fr) 1977-08-26
FR2339953B1 FR2339953B1 (enExample) 1979-07-20

Family

ID=9168723

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603010A Granted FR2339953A1 (fr) 1976-01-29 1976-01-29 Procede d'obtention de films minces en silicium de type n, de diodes a barriere de surface comportant de tels films, et detecteurs de particules comportant de telles diodes

Country Status (1)

Country Link
FR (1) FR2339953A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296348A1 (de) * 1987-05-27 1988-12-28 Siemens Aktiengesellschaft Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium
EP0553465A1 (de) * 1992-01-29 1993-08-04 Siemens Aktiengesellschaft Verfahren zur Herstellung eines perforierten Werkstückes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2244259A1 (en) * 1973-09-14 1975-04-11 Siffert Method of forming particle detectors - uses two rings to isolate substrate region during etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2244259A1 (en) * 1973-09-14 1975-04-11 Siffert Method of forming particle detectors - uses two rings to isolate substrate region during etching

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296348A1 (de) * 1987-05-27 1988-12-28 Siemens Aktiengesellschaft Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium
US4874484A (en) * 1987-05-27 1989-10-17 Siemens Aktiengesellschaft Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon
EP0553465A1 (de) * 1992-01-29 1993-08-04 Siemens Aktiengesellschaft Verfahren zur Herstellung eines perforierten Werkstückes

Also Published As

Publication number Publication date
FR2339953B1 (enExample) 1979-07-20

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Legal Events

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