FR2337434A1 - Diode avalanche haute-frequence a faible bruit - Google Patents

Diode avalanche haute-frequence a faible bruit

Info

Publication number
FR2337434A1
FR2337434A1 FR7700170A FR7700170A FR2337434A1 FR 2337434 A1 FR2337434 A1 FR 2337434A1 FR 7700170 A FR7700170 A FR 7700170A FR 7700170 A FR7700170 A FR 7700170A FR 2337434 A1 FR2337434 A1 FR 2337434A1
Authority
FR
France
Prior art keywords
high frequency
low noise
avalanche diode
noise high
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7700170A
Other languages
English (en)
Other versions
FR2337434B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2337434A1 publication Critical patent/FR2337434A1/fr
Application granted granted Critical
Publication of FR2337434B1 publication Critical patent/FR2337434B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7700170A 1976-01-05 1977-01-05 Diode avalanche haute-frequence a faible bruit Granted FR2337434A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/646,101 US4060820A (en) 1976-01-05 1976-01-05 Low noise read-type diode

Publications (2)

Publication Number Publication Date
FR2337434A1 true FR2337434A1 (fr) 1977-07-29
FR2337434B1 FR2337434B1 (fr) 1982-12-03

Family

ID=24591759

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7700170A Granted FR2337434A1 (fr) 1976-01-05 1977-01-05 Diode avalanche haute-frequence a faible bruit

Country Status (7)

Country Link
US (1) US4060820A (fr)
JP (1) JPS5285486A (fr)
CA (1) CA1067623A (fr)
CH (1) CH613564A5 (fr)
DE (1) DE2700336A1 (fr)
FR (1) FR2337434A1 (fr)
GB (1) GB1514020A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
US5256579A (en) * 1989-04-03 1993-10-26 Massachusetts Institute Of Technology Tunable-frequency Gunn diodes fabrication with focused ion beams
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
DE19526739C3 (de) * 1995-07-21 2001-03-29 Gen Semiconductor Ireland Macr Halbleiterbauelement
JP2995284B2 (ja) * 1995-08-25 1999-12-27 工業技術院長 電極作成方法
SE9900882D0 (sv) * 1999-03-12 1999-03-12 Ind Mikroelektronikcentrum Ab A high power IMPATT diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1522957A (fr) * 1966-05-16 1968-04-26 Western Electric Co Résistance négative dynamique formée par une diode à avalanche
US3904449A (en) * 1974-05-09 1975-09-09 Bell Telephone Labor Inc Growth technique for high efficiency gallium arsenide impatt diodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1522957A (fr) * 1966-05-16 1968-04-26 Western Electric Co Résistance négative dynamique formée par une diode à avalanche
US3904449A (en) * 1974-05-09 1975-09-09 Bell Telephone Labor Inc Growth technique for high efficiency gallium arsenide impatt diodes

Also Published As

Publication number Publication date
DE2700336A1 (de) 1977-07-14
CH613564A5 (fr) 1979-09-28
GB1514020A (en) 1978-06-14
FR2337434B1 (fr) 1982-12-03
US4060820A (en) 1977-11-29
CA1067623A (fr) 1979-12-04
JPS5285486A (en) 1977-07-15

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Legal Events

Date Code Title Description
ST Notification of lapse