FR2337432A1 - IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING - Google Patents

IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING

Info

Publication number
FR2337432A1
FR2337432A1 FR7539963A FR7539963A FR2337432A1 FR 2337432 A1 FR2337432 A1 FR 2337432A1 FR 7539963 A FR7539963 A FR 7539963A FR 7539963 A FR7539963 A FR 7539963A FR 2337432 A1 FR2337432 A1 FR 2337432A1
Authority
FR
France
Prior art keywords
improvement
obtaining
integrated circuits
bipolar transistors
complementary bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539963A
Other languages
French (fr)
Other versions
FR2337432B1 (en
Inventor
Wolfgang Edlinger
Michel De Brebisson
Jean-Pierre Biet
Jean-Michel Decrouen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7539963A priority Critical patent/FR2337432A1/en
Priority to DE19762657822 priority patent/DE2657822A1/en
Priority to GB54060/76A priority patent/GB1571621A/en
Priority to AU20909/76A priority patent/AU506891B2/en
Priority to NL7614383A priority patent/NL7614383A/en
Priority to CH1636176A priority patent/CH609489A5/en
Priority to SE7614560A priority patent/SE7614560L/en
Priority to JP15661676A priority patent/JPS5283080A/en
Publication of FR2337432A1 publication Critical patent/FR2337432A1/en
Priority to US05/907,819 priority patent/US4148055A/en
Application granted granted Critical
Publication of FR2337432B1 publication Critical patent/FR2337432B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0828—Combination of direct and inverse vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR7539963A 1975-12-29 1975-12-29 IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING Granted FR2337432A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (en) 1975-12-29 1975-12-29 IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING
DE19762657822 DE2657822A1 (en) 1975-12-29 1976-12-21 INTEGRATED CIRCUIT WITH COMPLEMENTARY BIPOLAR TRANSISTORS
AU20909/76A AU506891B2 (en) 1975-12-29 1976-12-24 Complementary bipolar transistors
NL7614383A NL7614383A (en) 1975-12-29 1976-12-24 INTEGRATED CIRCUIT WITH COMPLEMENTARY BI-POLAR TRANSISTORS.
GB54060/76A GB1571621A (en) 1975-12-29 1976-12-24 Integrated circuits and their manufacture
CH1636176A CH609489A5 (en) 1975-12-29 1976-12-27 Integrated circuit having complementary bipolar transistors
SE7614560A SE7614560L (en) 1975-12-29 1976-12-27 INTEGRATED CIRCUIT WITH COMPLEMENT BIPOLERA TRANSISTORS AND WAY TO PRODUCE THIS CIRCUIT
JP15661676A JPS5283080A (en) 1975-12-29 1976-12-27 Ic and method of producing same
US05/907,819 US4148055A (en) 1975-12-29 1978-05-19 Integrated circuit having complementary bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (en) 1975-12-29 1975-12-29 IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING

Publications (2)

Publication Number Publication Date
FR2337432A1 true FR2337432A1 (en) 1977-07-29
FR2337432B1 FR2337432B1 (en) 1979-06-22

Family

ID=9164256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539963A Granted FR2337432A1 (en) 1975-12-29 1975-12-29 IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING

Country Status (8)

Country Link
JP (1) JPS5283080A (en)
AU (1) AU506891B2 (en)
CH (1) CH609489A5 (en)
DE (1) DE2657822A1 (en)
FR (1) FR2337432A1 (en)
GB (1) GB1571621A (en)
NL (1) NL7614383A (en)
SE (1) SE7614560L (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (en) * 1971-05-22 1972-11-24
DE2212168C2 (en) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithically integrated semiconductor device
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
JPS5283080A (en) 1977-07-11
JPS5514539B2 (en) 1980-04-17
NL7614383A (en) 1977-07-01
DE2657822A1 (en) 1977-07-07
AU2090976A (en) 1978-06-29
DE2657822C2 (en) 1989-10-05
AU506891B2 (en) 1980-01-24
CH609489A5 (en) 1979-02-28
SE7614560L (en) 1977-06-30
FR2337432B1 (en) 1979-06-22
GB1571621A (en) 1980-07-16

Similar Documents

Publication Publication Date Title
BE841224A (en) FURNISHING ARTICLES PROCESS
FR2300964A1 (en) ALI PROCESS
FR2324434A1 (en) EXTRUSION PROCESS
FR2315972A1 (en) PROCESS FOR MANUFACTURING A STABLE AND EMULSIONED ANTI-FOAM COMPOSITION
BE778915A (en) PROCESS FOR OBTAINING ACRYLONITRILE AND METHACRYLONITRILE
FR2335057A1 (en) CONSTRUCTION PROCESS OF A THERMO-ELECTRIC MODULE AND MODULE THUS OBTAINED
FR2301092A1 (en) PROCESS FOR MANUFACTURING A SEMICONDUCTOR AND SEMICONDUCTOR OBTAINED
FR2320165A1 (en) ULTRASONIC MACHINING PROCESS AND INSTALLATION
BE839483A (en) AMMONOXIDATION PROCESS
FR2319978A1 (en) SEMICONDUCTOR INTEGRATED CIRCUITS AND PREPARATION PROCESS
FR2308588A1 (en) LIQUID SULFURIC ANHYDRIDE PRODUCTION
FR2299769A1 (en) APPLICATION PROCESS
FR2297713A1 (en) INTRODUCTION PROCEDURE
FR2305416A1 (en) PROCESS FOR THE PREPARATION OF TRICOSENE- (9) AND HENEICOSENE- (9)
FR2337432A1 (en) IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH COMPLEMENTARY BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING
FR2337431A1 (en) IMPROVEMENT OF THE STRUCTURE OF INTEGRATED CIRCUITS WITH BIPOLAR TRANSISTORS AND PROCESS FOR OBTAINING
RO70855A (en) PROCESS FOR OBTAINING PHARMACOLOGICALLY ACTIVE SULFOXIDES
FR2326399A1 (en) PROCESS FOR THE PRODUCTION OF AN ALKANE-POLYOL
FR2315530A1 (en) PHOSPHORESCENT COMPOSITION AND ITS OBTAINING PROCESS
FR2313349A1 (en) ISOLATION OF DINITROANTHRAQUINONES WITH A HIGH CONTENT IN A-A&#39;-DINITERS
FR2321766A1 (en) PHOTOCONDUCTIVE ELEMENT AND PROCESS FOR OBTAINING
FR2301267A1 (en) OBTAINING ENZ
BE858468A (en) PROCESS FOR HYDROFUGATION OF PLASTER ARTICLES
FR2300398A1 (en) D-CURVE FLATHING PROCESS
FR2332279A1 (en) QUINQUINA ALKALOID OXIDATION PROCESS

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse