FR2323270B1 - - Google Patents

Info

Publication number
FR2323270B1
FR2323270B1 FR7625098A FR7625098A FR2323270B1 FR 2323270 B1 FR2323270 B1 FR 2323270B1 FR 7625098 A FR7625098 A FR 7625098A FR 7625098 A FR7625098 A FR 7625098A FR 2323270 B1 FR2323270 B1 FR 2323270B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7625098A
Other versions
FR2323270A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2323270A1 publication Critical patent/FR2323270A1/fr
Application granted granted Critical
Publication of FR2323270B1 publication Critical patent/FR2323270B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7625098A 1975-09-03 1976-08-18 Amplificateur de regeneration pour des dispositifs a transfert de charge Granted FR2323270A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752539205 DE2539205A1 (de) 1975-09-03 1975-09-03 Regenerierverstaerker fuer ladungsverschiebeanordnungen

Publications (2)

Publication Number Publication Date
FR2323270A1 FR2323270A1 (fr) 1977-04-01
FR2323270B1 true FR2323270B1 (fr) 1978-11-03

Family

ID=5955512

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7625098A Granted FR2323270A1 (fr) 1975-09-03 1976-08-18 Amplificateur de regeneration pour des dispositifs a transfert de charge

Country Status (8)

Country Link
US (1) US4082963A (fr)
JP (1) JPS5230337A (fr)
BE (1) BE845852A (fr)
DE (1) DE2539205A1 (fr)
FR (1) FR2323270A1 (fr)
GB (1) GB1563141A (fr)
IT (1) IT1067840B (fr)
NL (1) NL7609579A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389899B1 (fr) * 1977-05-06 1981-11-06 Thomson Csf
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
JPS5544788A (en) * 1978-09-27 1980-03-29 Matsushita Electronics Corp Charge transfer method
JPS61180331A (ja) * 1985-10-04 1986-08-13 Nec Corp 集積回路装置
JP2519482B2 (ja) * 1987-10-20 1996-07-31 三菱電機株式会社 電荷転送装置
FR2731569B1 (fr) * 1995-03-07 1997-04-25 Thomson Tubes Electroniques Dispositif de recopie de tension a grande linearite

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
GB1435708A (en) * 1972-09-25 1976-05-12 Rca Corp Charge amplifier defibrillators
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3947698A (en) * 1973-09-17 1976-03-30 Texas Instruments Incorporated Charge coupled device multiplexer
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices

Also Published As

Publication number Publication date
US4082963A (en) 1978-04-04
NL7609579A (nl) 1977-03-07
IT1067840B (it) 1985-03-21
DE2539205A1 (de) 1977-03-17
GB1563141A (en) 1980-03-19
JPS5230337A (en) 1977-03-08
FR2323270A1 (fr) 1977-04-01
BE845852A (fr) 1976-12-31

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Legal Events

Date Code Title Description
ST Notification of lapse