FR2318679B1 - - Google Patents

Info

Publication number
FR2318679B1
FR2318679B1 FR7400837A FR7400837A FR2318679B1 FR 2318679 B1 FR2318679 B1 FR 2318679B1 FR 7400837 A FR7400837 A FR 7400837A FR 7400837 A FR7400837 A FR 7400837A FR 2318679 B1 FR2318679 B1 FR 2318679B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7400837A
Other versions
FR2318679A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7400837A priority Critical patent/FR2318679A1/fr
Publication of FR2318679A1 publication Critical patent/FR2318679A1/fr
Application granted granted Critical
Publication of FR2318679B1 publication Critical patent/FR2318679B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7400837A 1974-01-10 1974-01-10 Procede de formation de lingots monocristallins de composes semiconducteurs Granted FR2318679A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7400837A FR2318679A1 (fr) 1974-01-10 1974-01-10 Procede de formation de lingots monocristallins de composes semiconducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7400837A FR2318679A1 (fr) 1974-01-10 1974-01-10 Procede de formation de lingots monocristallins de composes semiconducteurs

Publications (2)

Publication Number Publication Date
FR2318679A1 FR2318679A1 (fr) 1977-02-18
FR2318679B1 true FR2318679B1 (fr) 1978-01-13

Family

ID=9133332

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7400837A Granted FR2318679A1 (fr) 1974-01-10 1974-01-10 Procede de formation de lingots monocristallins de composes semiconducteurs

Country Status (1)

Country Link
FR (1) FR2318679A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
US4289570A (en) * 1978-12-13 1981-09-15 United Technologies Corporation Seed and method for epitaxial solidification

Also Published As

Publication number Publication date
FR2318679A1 (fr) 1977-02-18

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Legal Events

Date Code Title Description
ST Notification of lapse