FR2316801B1 - - Google Patents
Info
- Publication number
- FR2316801B1 FR2316801B1 FR7618430A FR7618430A FR2316801B1 FR 2316801 B1 FR2316801 B1 FR 2316801B1 FR 7618430 A FR7618430 A FR 7618430A FR 7618430 A FR7618430 A FR 7618430A FR 2316801 B1 FR2316801 B1 FR 2316801B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/125—Modifications for increasing the maximum permissible switched current in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50074688A JPS51150285A (en) | 1975-06-18 | 1975-06-18 | Transistor switch device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2316801A1 FR2316801A1 (fr) | 1977-01-28 |
FR2316801B1 true FR2316801B1 (fr) | 1982-10-08 |
Family
ID=13554394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7618430A Granted FR2316801A1 (fr) | 1975-06-18 | 1976-06-17 | Dispositif de commutation a semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US4491742A (fr) |
JP (1) | JPS51150285A (fr) |
CH (1) | CH616779A5 (fr) |
DE (1) | DE2627440C2 (fr) |
FR (1) | FR2316801A1 (fr) |
SE (1) | SE7606967L (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646122A (en) * | 1983-03-11 | 1987-02-24 | Hitachi, Ltd. | Semiconductor device with floating remote gate turn-off means |
US4651189A (en) * | 1983-12-19 | 1987-03-17 | Hitachi, Ltd. | Semiconductor device provided with electrically floating control electrode |
DE3705403A1 (de) * | 1987-02-20 | 1988-09-01 | Standard Elektrik Lorenz Ag | Schaltung zur verstaerkung und formung eines wechselspannungssignals |
US4894567A (en) * | 1988-10-17 | 1990-01-16 | Honeywell Inc. | Active snubber circuit |
US5436786A (en) * | 1992-12-21 | 1995-07-25 | Dairyland Electrical Industries, Inc. | Isolator surge protector for DC isolation and AC grounding of cathodically protected systems |
CA2183176C (fr) * | 1995-08-18 | 2000-10-24 | Brian R. Pelly | Dispositif de blocage de courant continu grande puissance pour la mise a la terre de courant alternatif et de defaut |
US5856904A (en) * | 1996-11-15 | 1999-01-05 | Dairyland Electrical Industries, Inc. | Voltage and current based control and triggering for isolator surge protector |
JP3456120B2 (ja) * | 1997-09-09 | 2003-10-14 | 三菱電機株式会社 | レーザダイオード用電源制御装置 |
JP3456121B2 (ja) * | 1997-09-09 | 2003-10-14 | 三菱電機株式会社 | レーザダイオード用電源制御装置 |
WO2001080669A1 (fr) | 2000-04-25 | 2001-11-01 | Shinko Plant Construction Co., Ltd. | Dispositif permettant de laver des aliments avec de l'eau a l'ozone, et procede permettant de laver des aliments au moyen du dispositif de lavage |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
US3131311A (en) * | 1960-06-21 | 1964-04-28 | Bell Telephone Labor Inc | Semiconductor pulse generators |
DE1464960A1 (de) * | 1963-09-03 | 1969-08-28 | Gen Electric | Halbleiter-Schalter |
US3532903A (en) * | 1967-09-15 | 1970-10-06 | Sperry Rand Corp | Solid state switch |
US3694670A (en) * | 1971-10-26 | 1972-09-26 | Joseph M Marzolf | Easily switched silicon controlled rectifier |
JPS5254272Y2 (fr) * | 1973-07-26 | 1977-12-08 | ||
US3938027A (en) * | 1974-06-12 | 1976-02-10 | Mitsubishi Denki Kabushiki Kaisha | Electrical thyristor circuit |
-
1975
- 1975-06-18 JP JP50074688A patent/JPS51150285A/ja active Pending
-
1976
- 1976-06-17 SE SE7606967A patent/SE7606967L/xx not_active Application Discontinuation
- 1976-06-17 FR FR7618430A patent/FR2316801A1/fr active Granted
- 1976-06-18 DE DE2627440A patent/DE2627440C2/de not_active Expired
- 1976-08-31 CH CH1101176A patent/CH616779A5/de not_active IP Right Cessation
-
1982
- 1982-10-25 US US06/436,359 patent/US4491742A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CH616779A5 (fr) | 1980-04-15 |
US4491742A (en) | 1985-01-01 |
FR2316801A1 (fr) | 1977-01-28 |
DE2627440C2 (de) | 1986-01-30 |
DE2627440A1 (de) | 1976-12-23 |
SE7606967L (sv) | 1976-12-19 |
JPS51150285A (en) | 1976-12-23 |