FR2311407A1 - MONOLITHICALLY INTEGRATED CONTROL STAGE - Google Patents

MONOLITHICALLY INTEGRATED CONTROL STAGE

Info

Publication number
FR2311407A1
FR2311407A1 FR7614636A FR7614636A FR2311407A1 FR 2311407 A1 FR2311407 A1 FR 2311407A1 FR 7614636 A FR7614636 A FR 7614636A FR 7614636 A FR7614636 A FR 7614636A FR 2311407 A1 FR2311407 A1 FR 2311407A1
Authority
FR
France
Prior art keywords
integrated control
control stage
monolithically integrated
monolithically
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7614636A
Other languages
French (fr)
Inventor
Cornelius Obermeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2311407A1 publication Critical patent/FR2311407A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
FR7614636A 1975-05-16 1976-05-14 MONOLITHICALLY INTEGRATED CONTROL STAGE Withdrawn FR2311407A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752521949 DE2521949A1 (en) 1975-05-16 1975-05-16 MONOLITHICALLY INTEGRATED MIS DRIVER STAGE

Publications (1)

Publication Number Publication Date
FR2311407A1 true FR2311407A1 (en) 1976-12-10

Family

ID=5946771

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7614636A Withdrawn FR2311407A1 (en) 1975-05-16 1976-05-14 MONOLITHICALLY INTEGRATED CONTROL STAGE

Country Status (6)

Country Link
JP (1) JPS51140544A (en)
DE (1) DE2521949A1 (en)
FR (1) FR2311407A1 (en)
GB (1) GB1520078A (en)
IT (1) IT1060573B (en)
NL (1) NL7605092A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372548A1 (en) * 1976-11-29 1978-06-23 Ibm FIELD-EFFECT TRANSISTOR CONTROL DEVICE WORKING IN ENRICHMENT / DEPLETION MODE
FR2585903A1 (en) * 1985-08-02 1987-02-06 Sgs Microelettronica Spa PILOTAGE CIRCUIT WITH BOOTSTRAP IN N-MOS TECHNOLOGY FOR CAPACITIVE LOADS

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093875A (en) * 1977-01-31 1978-06-06 International Business Machines Corporation Field effect transistor (FET) circuit utilizing substrate potential for turning off depletion mode devices
US4500799A (en) * 1980-07-28 1985-02-19 Inmos Corporation Bootstrap driver circuits for an MOS memory
USH97H (en) * 1982-12-21 1986-08-05 At&T Bell Laboratories Row-address-decoder-driver circuit
GB2133946B (en) * 1983-01-14 1986-02-26 Itt Ind Ltd Memory output circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1534428A (en) * 1966-12-14 1968-07-26 North American Aviation Inc Capacitive feedback semiconductor metal oxide excitation device
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1534428A (en) * 1966-12-14 1968-07-26 North American Aviation Inc Capacitive feedback semiconductor metal oxide excitation device
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV700/71 *
NV700/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2372548A1 (en) * 1976-11-29 1978-06-23 Ibm FIELD-EFFECT TRANSISTOR CONTROL DEVICE WORKING IN ENRICHMENT / DEPLETION MODE
FR2585903A1 (en) * 1985-08-02 1987-02-06 Sgs Microelettronica Spa PILOTAGE CIRCUIT WITH BOOTSTRAP IN N-MOS TECHNOLOGY FOR CAPACITIVE LOADS

Also Published As

Publication number Publication date
GB1520078A (en) 1978-08-02
JPS51140544A (en) 1976-12-03
DE2521949A1 (en) 1976-11-25
NL7605092A (en) 1976-11-18
IT1060573B (en) 1982-08-20

Similar Documents

Publication Publication Date Title
NL7804158A (en) HYDANTOINE THERAPEUTICA.
NL7806802A (en) INTEGRATED CIRCUIT.
SE428679B (en) SET FOR CORONARY ACTIONS
FR2290086A1 (en) CONTROL STAGE AMPLIFIER
NL7901406A (en) ADJUSTMENT.
NL7610838A (en) ARTIFICIAL ISLAND.
NL7811418A (en) FAST ELECTRONOPTIC LENS.
IT7820191A0 (en) PLASTIC COMPOSITIONS.
FR2306339A1 (en) TURBOCHARGER CONTROL
NL7613951A (en) MAGNIFYING LENS.
FR2311407A1 (en) MONOLITHICALLY INTEGRATED CONTROL STAGE
IT7819249A0 (en) INTEGRATED CIRCUITS.
NL7610920A (en) INTEGRATED SWITCHING DEVICE.
TR19536A (en) PHASE-MONITOR ADJUSTMENT CIRCUITS
NL7803026A (en) ADJUSTMENT MECHANISM.
NL7612709A (en) DIAPER.
FR2321081A1 (en) CONTROL VALVE
NL7603827A (en) INTEGRATED CIRCUIT.
NO142594C (en) PROCEDURE FOR SEWING REMARKS.
FR2417217B1 (en) MONOLITHIC INTEGRATED CIRCUIT
FR2323261A1 (en) CONNECTION CONTROL CIRCUIT
NL7705360A (en) LINKABLE COMPOSITION.
NL7707099A (en) LIGHT-SENSITIVE SWITCHING DEVICE.
SU555885A1 (en) Ear heater
NL7800046A (en) INTEGRATED INJECTION CIRCUIT.

Legal Events

Date Code Title Description
ST Notification of lapse