FR2307378B1 - - Google Patents

Info

Publication number
FR2307378B1
FR2307378B1 FR7610637A FR7610637A FR2307378B1 FR 2307378 B1 FR2307378 B1 FR 2307378B1 FR 7610637 A FR7610637 A FR 7610637A FR 7610637 A FR7610637 A FR 7610637A FR 2307378 B1 FR2307378 B1 FR 2307378B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7610637A
Other languages
French (fr)
Other versions
FR2307378A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AEI Semiconductors Ltd
Original Assignee
AEI Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEI Semiconductors Ltd filed Critical AEI Semiconductors Ltd
Publication of FR2307378A1 publication Critical patent/FR2307378A1/fr
Application granted granted Critical
Publication of FR2307378B1 publication Critical patent/FR2307378B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR7610637A 1975-04-11 1976-04-12 Thyristor a emetteur court-circuite Granted FR2307378A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB15093/75A GB1546094A (en) 1975-04-11 1975-04-11 Thyristors

Publications (2)

Publication Number Publication Date
FR2307378A1 FR2307378A1 (fr) 1976-11-05
FR2307378B1 true FR2307378B1 (ja) 1980-12-19

Family

ID=10052908

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7610637A Granted FR2307378A1 (fr) 1975-04-11 1976-04-12 Thyristor a emetteur court-circuite

Country Status (5)

Country Link
DE (1) DE2527191B2 (ja)
FR (1) FR2307378A1 (ja)
GB (1) GB1546094A (ja)
IT (1) IT1058809B (ja)
SE (1) SE413958B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2520134C3 (de) * 1975-05-06 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor mit einem rechteckigen Halbleiterelement
IN149647B (ja) * 1977-03-21 1982-02-27 Westinghouse Electric Corp
CS208929B1 (en) * 1977-08-23 1981-10-30 Jaroslav Homola Multilayer semiconductor device
JP5976640B2 (ja) 2010-06-21 2016-08-23 アーベーベー・テヒノロギー・アーゲー 局所のエミッタ短絡ドットの改善されたパターンを持つ位相制御サイリスタ
CN102468330A (zh) * 2010-11-09 2012-05-23 杭州汉安半导体有限公司 一种短路点新型布局的快速晶闸管

Also Published As

Publication number Publication date
FR2307378A1 (fr) 1976-11-05
SE7604154L (sv) 1976-10-12
SE413958B (sv) 1980-06-30
DE2527191A1 (de) 1976-10-14
GB1546094A (en) 1979-05-16
DE2527191B2 (de) 1978-07-13
IT1058809B (it) 1982-05-10

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Legal Events

Date Code Title Description
ST Notification of lapse