FR2301921B3 - - Google Patents
Info
- Publication number
- FR2301921B3 FR2301921B3 FR7505050A FR7505050A FR2301921B3 FR 2301921 B3 FR2301921 B3 FR 2301921B3 FR 7505050 A FR7505050 A FR 7505050A FR 7505050 A FR7505050 A FR 7505050A FR 2301921 B3 FR2301921 B3 FR 2301921B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H10P95/50—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7505050A FR2301921A1 (fr) | 1975-02-18 | 1975-02-18 | Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7505050A FR2301921A1 (fr) | 1975-02-18 | 1975-02-18 | Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2301921A1 FR2301921A1 (fr) | 1976-09-17 |
| FR2301921B3 true FR2301921B3 (show.php) | 1977-10-28 |
Family
ID=9151379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7505050A Granted FR2301921A1 (fr) | 1975-02-18 | 1975-02-18 | Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2301921A1 (show.php) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4320780B4 (de) * | 1993-06-23 | 2007-07-12 | Robert Bosch Gmbh | Halbleiteranordnung und Verfahren zur Herstellung |
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1975
- 1975-02-18 FR FR7505050A patent/FR2301921A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2301921A1 (fr) | 1976-09-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |