FR2300616A1 - Procede de synthese de composes semi-conducteurs - Google Patents

Procede de synthese de composes semi-conducteurs

Info

Publication number
FR2300616A1
FR2300616A1 FR7504325A FR7504325A FR2300616A1 FR 2300616 A1 FR2300616 A1 FR 2300616A1 FR 7504325 A FR7504325 A FR 7504325A FR 7504325 A FR7504325 A FR 7504325A FR 2300616 A1 FR2300616 A1 FR 2300616A1
Authority
FR
France
Prior art keywords
synthesis process
semiconductor compounds
compounds synthesis
semiconductor
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7504325A
Other languages
English (en)
French (fr)
Other versions
FR2300616B1 (US20020095090A1-20020718-M00002.png
Inventor
Jean-Pierre Besselere
Gerard Poiblaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7504325A priority Critical patent/FR2300616A1/fr
Priority to GB511376A priority patent/GB1502087A/en
Priority to BE164213A priority patent/BE838425A/xx
Priority to DE19762605125 priority patent/DE2605125A1/de
Priority to JP1437776A priority patent/JPS51115769A/ja
Publication of FR2300616A1 publication Critical patent/FR2300616A1/fr
Application granted granted Critical
Publication of FR2300616B1 publication Critical patent/FR2300616B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7504325A 1975-02-12 1975-02-12 Procede de synthese de composes semi-conducteurs Granted FR2300616A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7504325A FR2300616A1 (fr) 1975-02-12 1975-02-12 Procede de synthese de composes semi-conducteurs
GB511376A GB1502087A (en) 1975-02-12 1976-02-10 Method of preparing semiconductor compounds and manufacturing single crystals thereof
BE164213A BE838425A (fr) 1975-02-12 1976-02-10 Werkwijze voor de bereiding van halfgeleiderverdindingen en het vervaardigen van eekristallen daarvan
DE19762605125 DE2605125A1 (de) 1975-02-12 1976-02-10 Verfahren zur herstellung von halbleiterverbindungen und von einkristallen aus diesen verbindungen
JP1437776A JPS51115769A (en) 1975-02-12 1976-02-12 Seniconductor compound and method of producucing single crystal thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7504325A FR2300616A1 (fr) 1975-02-12 1975-02-12 Procede de synthese de composes semi-conducteurs

Publications (2)

Publication Number Publication Date
FR2300616A1 true FR2300616A1 (fr) 1976-09-10
FR2300616B1 FR2300616B1 (US20020095090A1-20020718-M00002.png) 1977-07-22

Family

ID=9151100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7504325A Granted FR2300616A1 (fr) 1975-02-12 1975-02-12 Procede de synthese de composes semi-conducteurs

Country Status (5)

Country Link
JP (1) JPS51115769A (US20020095090A1-20020718-M00002.png)
BE (1) BE838425A (US20020095090A1-20020718-M00002.png)
DE (1) DE2605125A1 (US20020095090A1-20020718-M00002.png)
FR (1) FR2300616A1 (US20020095090A1-20020718-M00002.png)
GB (1) GB1502087A (US20020095090A1-20020718-M00002.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155073U (US20020095090A1-20020718-M00002.png) * 1984-09-11 1986-04-14
JPS63195187A (ja) * 1987-02-06 1988-08-12 Furukawa Electric Co Ltd:The 化合物半導体結晶成長装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1494831A (fr) * 1966-07-05 1967-09-15 Radiotechnique Coprim Procédé de fabrication d'un monocristal et dispositif de mise en oeuvre
JPS5148152B2 (US20020095090A1-20020718-M00002.png) * 1972-05-11 1976-12-18

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
GB1502087A (en) 1978-02-22
FR2300616B1 (US20020095090A1-20020718-M00002.png) 1977-07-22
DE2605125A1 (de) 1976-08-26
JPS51115769A (en) 1976-10-12
BE838425A (fr) 1976-08-10
JPS5412267B2 (US20020095090A1-20020718-M00002.png) 1979-05-22

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Legal Events

Date Code Title Description
ST Notification of lapse