FR2297522A1 - Structure a transistors a faible duree de stockage - Google Patents

Structure a transistors a faible duree de stockage

Info

Publication number
FR2297522A1
FR2297522A1 FR7600354A FR7600354A FR2297522A1 FR 2297522 A1 FR2297522 A1 FR 2297522A1 FR 7600354 A FR7600354 A FR 7600354A FR 7600354 A FR7600354 A FR 7600354A FR 2297522 A1 FR2297522 A1 FR 2297522A1
Authority
FR
France
Prior art keywords
transistor structure
storage transistor
short storage
short
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7600354A
Other languages
English (en)
French (fr)
Other versions
FR2297522B1 (OSRAM
Inventor
A E Ring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Handel und Investments AG
Original Assignee
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Handel und Investments AG filed Critical Plessey Handel und Investments AG
Publication of FR2297522A1 publication Critical patent/FR2297522A1/fr
Application granted granted Critical
Publication of FR2297522B1 publication Critical patent/FR2297522B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
FR7600354A 1975-01-10 1976-01-08 Structure a transistors a faible duree de stockage Granted FR2297522A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1046/75A GB1490631A (en) 1975-01-10 1975-01-10 Transistor arrangement having low charge storage

Publications (2)

Publication Number Publication Date
FR2297522A1 true FR2297522A1 (fr) 1976-08-06
FR2297522B1 FR2297522B1 (OSRAM) 1980-11-14

Family

ID=9715238

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7600354A Granted FR2297522A1 (fr) 1975-01-10 1976-01-08 Structure a transistors a faible duree de stockage

Country Status (5)

Country Link
US (1) US4027180A (OSRAM)
FR (1) FR2297522A1 (OSRAM)
GB (1) GB1490631A (OSRAM)
HK (1) HK57280A (OSRAM)
MY (1) MY8100206A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409599A1 (fr) * 1977-11-17 1979-06-15 Philips Nv Circuit logique integre
EP0029538A1 (de) * 1979-11-26 1981-06-03 Siemens Aktiengesellschaft Integrierbare Schaltung zur Verhinderung des Sättigungszustandes eines Transistors
WO1990001216A1 (en) * 1988-07-27 1990-02-08 Unisys Corporation Speed-up circuit for npn bipolar transistors

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712649A (nl) * 1977-11-17 1979-05-21 Philips Nv Geientegreerde schakeling.
US4213068A (en) 1978-01-30 1980-07-15 Rca Corporation Transistor saturation control
US4390890A (en) * 1980-06-26 1983-06-28 International Business Machines Corporation Saturation-limited bipolar transistor device
US4463369A (en) * 1981-06-15 1984-07-31 Rca Integrated circuit overload protection device
US4684878A (en) * 1986-05-08 1987-08-04 Rca Corporation Transistor base current regulator
DE3841777C2 (de) * 1988-12-12 1994-06-23 Telefunken Microelectron Halbleiteranordnung mit vertikalem npn-Planartransistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2891173A (en) * 1957-01-28 1959-06-16 Rca Corp Sawtooth wave generator
US3233125A (en) * 1963-01-08 1966-02-01 Trw Semiconductors Inc Transistor technology
NL7102199A (OSRAM) * 1971-02-19 1972-08-22
JPS5135113B1 (OSRAM) * 1971-06-29 1976-09-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409599A1 (fr) * 1977-11-17 1979-06-15 Philips Nv Circuit logique integre
EP0029538A1 (de) * 1979-11-26 1981-06-03 Siemens Aktiengesellschaft Integrierbare Schaltung zur Verhinderung des Sättigungszustandes eines Transistors
WO1990001216A1 (en) * 1988-07-27 1990-02-08 Unisys Corporation Speed-up circuit for npn bipolar transistors

Also Published As

Publication number Publication date
GB1490631A (en) 1977-11-02
US4027180A (en) 1977-05-31
MY8100206A (en) 1981-12-31
FR2297522B1 (OSRAM) 1980-11-14
HK57280A (en) 1980-10-16

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property