FR2294523B2 - - Google Patents
Info
- Publication number
- FR2294523B2 FR2294523B2 FR7537931A FR7537931A FR2294523B2 FR 2294523 B2 FR2294523 B2 FR 2294523B2 FR 7537931 A FR7537931 A FR 7537931A FR 7537931 A FR7537931 A FR 7537931A FR 2294523 B2 FR2294523 B2 FR 2294523B2
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Organic Insulating Materials (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53229874A | 1974-12-12 | 1974-12-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2294523A2 FR2294523A2 (fr) | 1976-07-09 |
FR2294523B2 true FR2294523B2 (fr) | 1979-05-11 |
Family
ID=24121200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7537931A Granted FR2294523A2 (fr) | 1974-12-12 | 1975-12-11 | Composition dielectrique pouvant etre passee a volonte d'un etat de forte resistance electrique a un etat de faible resistance electrique et inversement |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5171340A (fr) |
DE (1) | DE2501841A1 (fr) |
FR (1) | FR2294523A2 (fr) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3926916A (en) * | 1972-12-22 | 1975-12-16 | Du Pont | Dielectric composition capable of electrical activation |
FR2211713A1 (en) * | 1972-12-22 | 1974-07-19 | Du Pont | Electric element for permanent modifiable memory matrix - comprises a diode and a current regulating junction in combination |
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1975
- 1975-01-17 DE DE19752501841 patent/DE2501841A1/de active Pending
- 1975-01-18 JP JP50008317A patent/JPS5171340A/ja active Pending
- 1975-12-11 FR FR7537931A patent/FR2294523A2/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2501841A1 (de) | 1976-06-16 |
FR2294523A2 (fr) | 1976-07-09 |
JPS5171340A (fr) | 1976-06-21 |