FR2288388B3 - - Google Patents

Info

Publication number
FR2288388B3
FR2288388B3 FR7434802A FR7434802A FR2288388B3 FR 2288388 B3 FR2288388 B3 FR 2288388B3 FR 7434802 A FR7434802 A FR 7434802A FR 7434802 A FR7434802 A FR 7434802A FR 2288388 B3 FR2288388 B3 FR 2288388B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7434802A
Other languages
French (fr)
Other versions
FR2288388A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7434802A priority Critical patent/FR2288388A1/fr
Publication of FR2288388A1 publication Critical patent/FR2288388A1/fr
Application granted granted Critical
Publication of FR2288388B3 publication Critical patent/FR2288388B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
FR7434802A 1974-10-16 1974-10-16 Structures integrees associant plusieurs dispositifs elementaires a semi-conducteur et procedes de fabrication Granted FR2288388A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7434802A FR2288388A1 (fr) 1974-10-16 1974-10-16 Structures integrees associant plusieurs dispositifs elementaires a semi-conducteur et procedes de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7434802A FR2288388A1 (fr) 1974-10-16 1974-10-16 Structures integrees associant plusieurs dispositifs elementaires a semi-conducteur et procedes de fabrication

Publications (2)

Publication Number Publication Date
FR2288388A1 FR2288388A1 (fr) 1976-05-14
FR2288388B3 true FR2288388B3 (esLanguage) 1977-07-22

Family

ID=9144171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7434802A Granted FR2288388A1 (fr) 1974-10-16 1974-10-16 Structures integrees associant plusieurs dispositifs elementaires a semi-conducteur et procedes de fabrication

Country Status (1)

Country Link
FR (1) FR2288388A1 (esLanguage)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410363A1 (fr) * 1977-11-28 1979-06-22 Silicium Semiconducteur Ssc Procede de fabrication de caisson dans un dispositif a semi-conducteurs
WO1996007206A1 (fr) * 1994-08-26 1996-03-07 Jury Alexeevich Evseev Module redresseur semiconducteur

Also Published As

Publication number Publication date
FR2288388A1 (fr) 1976-05-14

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Legal Events

Date Code Title Description
ST Notification of lapse