FR2269235B1 - - Google Patents
Info
- Publication number
- FR2269235B1 FR2269235B1 FR7512933A FR7512933A FR2269235B1 FR 2269235 B1 FR2269235 B1 FR 2269235B1 FR 7512933 A FR7512933 A FR 7512933A FR 7512933 A FR7512933 A FR 7512933A FR 2269235 B1 FR2269235 B1 FR 2269235B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/54—Amplifiers using transit-time effect in tubes or semiconductor devices
- H03F3/55—Amplifiers using transit-time effect in tubes or semiconductor devices with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1812374A GB1468578A (en) | 1974-04-25 | 1974-04-25 | Microwave transistor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2269235A1 FR2269235A1 (US08197722-20120612-C00093.png) | 1975-11-21 |
| FR2269235B1 true FR2269235B1 (US08197722-20120612-C00093.png) | 1978-10-13 |
Family
ID=10107058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7512933A Expired FR2269235B1 (US08197722-20120612-C00093.png) | 1974-04-25 | 1975-04-25 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3946336A (US08197722-20120612-C00093.png) |
| FR (1) | FR2269235B1 (US08197722-20120612-C00093.png) |
| GB (1) | GB1468578A (US08197722-20120612-C00093.png) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2305857A1 (fr) * | 1975-03-28 | 1976-10-22 | Thomson Csf | Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif |
| FR2408221A1 (fr) * | 1977-10-04 | 1979-06-01 | Thomson Csf | Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure |
| US4649405A (en) * | 1984-04-10 | 1987-03-10 | Cornell Research Foundation, Inc. | Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices |
| US4849718A (en) * | 1987-09-03 | 1989-07-18 | Raytheon Company | Circuitry and method for controlling IMPATT diode |
| US5107229A (en) * | 1990-11-26 | 1992-04-21 | Lectronic Research Labs | Solid state oscillator for generating microwave signals |
| US5304919A (en) * | 1992-06-12 | 1994-04-19 | The United States Of America As Represented By The Department Of Energy | Electronic constant current and current pulse signal generator for nuclear instrumentation testing |
| JP3219005B2 (ja) * | 1996-08-13 | 2001-10-15 | 日本電気株式会社 | 負性抵抗増幅器 |
| US6560452B1 (en) * | 2000-11-27 | 2003-05-06 | Rf Micro Devices, Inc. | Oscillator having a transistor formed of a wide bandgap semiconductor material |
| DE10136032A1 (de) * | 2001-07-25 | 2003-02-20 | Forschungsverbund Berlin Ev | Gunn-Effekt-Halbleiterbauelement wie ein Hetero-Bipolar-Transistor (HBT) zur frequenzvariablen Schwingungserzeugung |
| RU2341851C1 (ru) * | 2007-05-08 | 2008-12-20 | Закрытое Акционерное Общество "Сем Технолоджи" | Устройство для регулирования физиологических процессов в биологическом объекте |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3531698A (en) * | 1968-05-21 | 1970-09-29 | Hewlett Packard Co | Current control in bulk negative conductance materials |
| US3855605A (en) * | 1972-06-19 | 1974-12-17 | Rca Corp | Carrier injected avalanche device |
-
1974
- 1974-04-25 GB GB1812374A patent/GB1468578A/en not_active Expired
-
1975
- 1975-02-26 US US05/553,351 patent/US3946336A/en not_active Expired - Lifetime
- 1975-04-25 FR FR7512933A patent/FR2269235B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1468578A (en) | 1977-03-30 |
| FR2269235A1 (US08197722-20120612-C00093.png) | 1975-11-21 |
| US3946336A (en) | 1976-03-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |