FR2269235A1 - - Google Patents

Info

Publication number
FR2269235A1
FR2269235A1 FR7512933A FR7512933A FR2269235A1 FR 2269235 A1 FR2269235 A1 FR 2269235A1 FR 7512933 A FR7512933 A FR 7512933A FR 7512933 A FR7512933 A FR 7512933A FR 2269235 A1 FR2269235 A1 FR 2269235A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7512933A
Other languages
French (fr)
Other versions
FR2269235B1 (US06373033-20020416-M00002.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2269235A1 publication Critical patent/FR2269235A1/fr
Application granted granted Critical
Publication of FR2269235B1 publication Critical patent/FR2269235B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/54Amplifiers using transit-time effect in tubes or semiconductor devices
    • H03F3/55Amplifiers using transit-time effect in tubes or semiconductor devices with semiconductor devices only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
FR7512933A 1974-04-25 1975-04-25 Expired FR2269235B1 (US06373033-20020416-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1812374A GB1468578A (en) 1974-04-25 1974-04-25 Microwave transistor circuit

Publications (2)

Publication Number Publication Date
FR2269235A1 true FR2269235A1 (US06373033-20020416-M00002.png) 1975-11-21
FR2269235B1 FR2269235B1 (US06373033-20020416-M00002.png) 1978-10-13

Family

ID=10107058

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7512933A Expired FR2269235B1 (US06373033-20020416-M00002.png) 1974-04-25 1975-04-25

Country Status (3)

Country Link
US (1) US3946336A (US06373033-20020416-M00002.png)
FR (1) FR2269235B1 (US06373033-20020416-M00002.png)
GB (1) GB1468578A (US06373033-20020416-M00002.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408221A1 (fr) * 1977-10-04 1979-06-01 Thomson Csf Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure
WO2003019692A1 (de) * 2001-07-25 2003-03-06 Forschungsverbund Berlin E.V. Gunn-effekt-halbleiterbauelement wie ein hetero-bipolar-transistor (hbt) zur frequenzvariablen schwingungserzeugung

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305857A1 (fr) * 1975-03-28 1976-10-22 Thomson Csf Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif
US4649405A (en) * 1984-04-10 1987-03-10 Cornell Research Foundation, Inc. Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
US4849718A (en) * 1987-09-03 1989-07-18 Raytheon Company Circuitry and method for controlling IMPATT diode
US5107229A (en) * 1990-11-26 1992-04-21 Lectronic Research Labs Solid state oscillator for generating microwave signals
US5304919A (en) * 1992-06-12 1994-04-19 The United States Of America As Represented By The Department Of Energy Electronic constant current and current pulse signal generator for nuclear instrumentation testing
JP3219005B2 (ja) * 1996-08-13 2001-10-15 日本電気株式会社 負性抵抗増幅器
US6560452B1 (en) 2000-11-27 2003-05-06 Rf Micro Devices, Inc. Oscillator having a transistor formed of a wide bandgap semiconductor material
RU2341851C1 (ru) * 2007-05-08 2008-12-20 Закрытое Акционерное Общество "Сем Технолоджи" Устройство для регулирования физиологических процессов в биологическом объекте

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3531698A (en) * 1968-05-21 1970-09-29 Hewlett Packard Co Current control in bulk negative conductance materials
US3855605A (en) * 1972-06-19 1974-12-17 Rca Corp Carrier injected avalanche device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408221A1 (fr) * 1977-10-04 1979-06-01 Thomson Csf Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure
WO2003019692A1 (de) * 2001-07-25 2003-03-06 Forschungsverbund Berlin E.V. Gunn-effekt-halbleiterbauelement wie ein hetero-bipolar-transistor (hbt) zur frequenzvariablen schwingungserzeugung

Also Published As

Publication number Publication date
GB1468578A (en) 1977-03-30
FR2269235B1 (US06373033-20020416-M00002.png) 1978-10-13
US3946336A (en) 1976-03-23

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Legal Events

Date Code Title Description
ST Notification of lapse