FR2264589B1 - - Google Patents

Info

Publication number
FR2264589B1
FR2264589B1 FR7409089A FR7409089A FR2264589B1 FR 2264589 B1 FR2264589 B1 FR 2264589B1 FR 7409089 A FR7409089 A FR 7409089A FR 7409089 A FR7409089 A FR 7409089A FR 2264589 B1 FR2264589 B1 FR 2264589B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7409089A
Other languages
French (fr)
Other versions
FR2264589A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZ TEKHN I IM
Original Assignee
FIZ TEKHN I IM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZ TEKHN I IM filed Critical FIZ TEKHN I IM
Priority to FR7409089A priority Critical patent/FR2264589A1/fr
Publication of FR2264589A1 publication Critical patent/FR2264589A1/fr
Application granted granted Critical
Publication of FR2264589B1 publication Critical patent/FR2264589B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7409089A 1974-03-18 1974-03-18 Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss Granted FR2264589A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7409089A FR2264589A1 (en) 1974-03-18 1974-03-18 Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7409089A FR2264589A1 (en) 1974-03-18 1974-03-18 Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss

Publications (2)

Publication Number Publication Date
FR2264589A1 FR2264589A1 (en) 1975-10-17
FR2264589B1 true FR2264589B1 (ja) 1977-09-30

Family

ID=9136451

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7409089A Granted FR2264589A1 (en) 1974-03-18 1974-03-18 Epitaxial prodn. of silicon carbide semiconductor - by sublimation in regulated temp. field, minimising vapour loss

Country Status (1)

Country Link
FR (1) FR2264589A1 (ja)

Also Published As

Publication number Publication date
FR2264589A1 (en) 1975-10-17

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Legal Events

Date Code Title Description
ST Notification of lapse