FR2257145A1 - - Google Patents

Info

Publication number
FR2257145A1
FR2257145A1 FR7400294A FR7400294A FR2257145A1 FR 2257145 A1 FR2257145 A1 FR 2257145A1 FR 7400294 A FR7400294 A FR 7400294A FR 7400294 A FR7400294 A FR 7400294A FR 2257145 A1 FR2257145 A1 FR 2257145A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7400294A
Other languages
French (fr)
Other versions
FR2257145B1 (US06482866-20021119-C00009.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7400294A priority Critical patent/FR2257145B1/fr
Priority to JP752992A priority patent/JPS5921182B2/ja
Priority to GB7375A priority patent/GB1469081A/en
Priority to US05/538,168 priority patent/US4019247A/en
Priority to DE19752500184 priority patent/DE2500184A1/de
Publication of FR2257145A1 publication Critical patent/FR2257145A1/fr
Priority to US05/718,461 priority patent/US4065847A/en
Application granted granted Critical
Publication of FR2257145B1 publication Critical patent/FR2257145B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7400294A 1974-01-04 1974-01-04 Expired FR2257145B1 (US06482866-20021119-C00009.png)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7400294A FR2257145B1 (US06482866-20021119-C00009.png) 1974-01-04 1974-01-04
JP752992A JPS5921182B2 (ja) 1974-01-04 1974-12-27 電荷移動デバイス製作法
GB7375A GB1469081A (en) 1974-01-04 1975-01-02 Method of fabrication of a charge-coupled device
US05/538,168 US4019247A (en) 1974-01-04 1975-01-02 Fabrication of a charge-coupled device
DE19752500184 DE2500184A1 (de) 1974-01-04 1975-01-03 Verfahren zum herstellen einer ladungsuebertragungsvorrichtung
US05/718,461 US4065847A (en) 1974-01-04 1976-08-30 Method of fabrication of a charge-coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7400294A FR2257145B1 (US06482866-20021119-C00009.png) 1974-01-04 1974-01-04

Publications (2)

Publication Number Publication Date
FR2257145A1 true FR2257145A1 (US06482866-20021119-C00009.png) 1975-08-01
FR2257145B1 FR2257145B1 (US06482866-20021119-C00009.png) 1976-11-26

Family

ID=9133116

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7400294A Expired FR2257145B1 (US06482866-20021119-C00009.png) 1974-01-04 1974-01-04

Country Status (5)

Country Link
US (1) US4019247A (US06482866-20021119-C00009.png)
JP (1) JPS5921182B2 (US06482866-20021119-C00009.png)
DE (1) DE2500184A1 (US06482866-20021119-C00009.png)
FR (1) FR2257145B1 (US06482866-20021119-C00009.png)
GB (1) GB1469081A (US06482866-20021119-C00009.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2360995A1 (fr) * 1976-08-06 1978-03-03 Honeywell Inf Systems Dispositif semi-conducteur a couplage par des charges
FR2603732A1 (fr) * 1986-09-04 1988-03-11 Werk Fernsehelektronik Veb Registre a decalage a accouplement de charge (registre ccd) avec une tres petite trame en supprimant une zone de transfert

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606101B2 (ja) * 1976-10-14 1985-02-15 ソニー株式会社 電荷転送装置の製法
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4216574A (en) * 1978-06-29 1980-08-12 Raytheon Company Charge coupled device
USRE31151E (en) * 1980-04-07 1983-02-15 Inexpensive solar cell and method therefor
US4474624A (en) * 1982-07-12 1984-10-02 Intel Corporation Process for forming self-aligned complementary source/drain regions for MOS transistors
US4896003A (en) * 1989-06-30 1990-01-23 Hsieh Man Ching Multi-position electrical switch
JP4639116B2 (ja) * 2005-06-27 2011-02-23 富士フイルム株式会社 Ｃｃｄ型固体撮像装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1289740A (US06482866-20021119-C00009.png) * 1969-12-24 1972-09-20
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices
US3735156A (en) * 1971-06-28 1973-05-22 Bell Telephone Labor Inc Reversible two-phase charge coupled devices
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
JPS4847234A (US06482866-20021119-C00009.png) * 1971-10-18 1973-07-05
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung
DE2331616A1 (de) * 1973-06-22 1975-01-23 Bosch Gmbh Robert Einrichtung zur kompensation von seitenwind- und anderen, eine seitenabweichung eines kraftfahrzeugs bewirkenden stoerkraeften

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2360995A1 (fr) * 1976-08-06 1978-03-03 Honeywell Inf Systems Dispositif semi-conducteur a couplage par des charges
FR2603732A1 (fr) * 1986-09-04 1988-03-11 Werk Fernsehelektronik Veb Registre a decalage a accouplement de charge (registre ccd) avec une tres petite trame en supprimant une zone de transfert

Also Published As

Publication number Publication date
US4019247A (en) 1977-04-26
DE2500184A1 (de) 1975-07-17
FR2257145B1 (US06482866-20021119-C00009.png) 1976-11-26
JPS50118687A (US06482866-20021119-C00009.png) 1975-09-17
JPS5921182B2 (ja) 1984-05-18
DE2500184C2 (US06482866-20021119-C00009.png) 1989-04-06
GB1469081A (en) 1977-03-30

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Legal Events

Date Code Title Description
ST Notification of lapse