FR2247825A1 - - Google Patents

Info

Publication number
FR2247825A1
FR2247825A1 FR7433833A FR7433833A FR2247825A1 FR 2247825 A1 FR2247825 A1 FR 2247825A1 FR 7433833 A FR7433833 A FR 7433833A FR 7433833 A FR7433833 A FR 7433833A FR 2247825 A1 FR2247825 A1 FR 2247825A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7433833A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2247825A1 publication Critical patent/FR2247825A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/34Photo-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes
    • H01J2201/342Cathodes
    • H01J2201/3421Composition of the emitting surface
    • H01J2201/3423Semiconductors, e.g. GaAs, NEA emitters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes
    • H01J2201/342Cathodes
    • H01J2201/3421Composition of the emitting surface
    • H01J2201/3425Metals, metal alloys
FR7433833A 1973-10-15 1974-10-08 Withdrawn FR2247825A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US406183A US3867662A (en) 1973-10-15 1973-10-15 Grating tuned photoemitter

Publications (1)

Publication Number Publication Date
FR2247825A1 true FR2247825A1 (enExample) 1975-05-09

Family

ID=23606881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7433833A Withdrawn FR2247825A1 (enExample) 1973-10-15 1974-10-08

Country Status (6)

Country Link
US (1) US3867662A (enExample)
JP (1) JPS5210630B2 (enExample)
CA (1) CA1023832A (enExample)
DE (1) DE2449049A1 (enExample)
FR (1) FR2247825A1 (enExample)
GB (1) GB1479163A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7600425A (nl) * 1976-01-16 1977-07-19 Philips Nv Televisie-opneembuis.
US4147949A (en) * 1977-01-14 1979-04-03 General Electric Company Apparatus for X-ray radiography
US4196257A (en) * 1978-07-20 1980-04-01 Rca Corporation Bi-alkali telluride photocathode
US4853595A (en) * 1987-08-31 1989-08-01 Alfano Robert R Photomultiplier tube having a transmission strip line photocathode and system for use therewith
JP2758529B2 (ja) * 1992-04-22 1998-05-28 浜松ホトニクス株式会社 反射型光電面および光電子増倍管
JP3518880B2 (ja) * 1992-06-11 2004-04-12 浜松ホトニクス株式会社 反射型アルカリ光電面および光電子増倍管
US5336902A (en) * 1992-10-05 1994-08-09 Hamamatsu Photonics K.K. Semiconductor photo-electron-emitting device
US5633562A (en) * 1993-02-02 1997-05-27 Hamamatsu Photonics K.K. Reflection mode alkali photocathode, and photomultiplier using the same
GB9620037D0 (en) * 1996-09-26 1996-11-13 British Tech Group Radiation transducers
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
US6538256B1 (en) * 2000-08-17 2003-03-25 Applied Materials, Inc. Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
US7315115B1 (en) * 2000-10-27 2008-01-01 Canon Kabushiki Kaisha Light-emitting and electron-emitting devices having getter regions
US6630786B2 (en) * 2001-03-30 2003-10-07 Candescent Technologies Corporation Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance
US7301263B2 (en) * 2004-05-28 2007-11-27 Applied Materials, Inc. Multiple electron beam system with electron transmission gates
EP2252545A2 (en) * 2008-03-10 2010-11-24 Yeda Research And Development Company Ltd. Method for fabricating nano-scale patterned surfaces

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL235195A (enExample) * 1958-01-18
US3163765A (en) * 1961-06-14 1964-12-29 Rauland Corp Gamma ray image converters
US3588570A (en) * 1968-04-29 1971-06-28 Westinghouse Electric Corp Masked photocathode structure with a masked,patterned layer of titanium oxide

Also Published As

Publication number Publication date
JPS5210630B2 (enExample) 1977-03-25
US3867662A (en) 1975-02-18
JPS5068268A (enExample) 1975-06-07
GB1479163A (en) 1977-07-06
DE2449049A1 (de) 1975-05-28
CA1023832A (en) 1978-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse