Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/60—Electrodes characterised by their materials
  • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03G—CONTROL OF AMPLIFICATION
  • H03G1/00—Details of arrangements for controlling amplification
  • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
  • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
  • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03G—CONTROL OF AMPLIFICATION
  • H03G1/00—Details of arrangements for controlling amplification
  • H03G1/04—Modifications of control circuit to reduce distortion caused by control
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Applications Claiming Priority (1)

Publications (2)

Family

ID=13785082

Family Applications (1)

Country Status (4)

Families Citing this family (1)

• 1973
  • 1973-07-23 JP JP8282273A patent/JPS571936B2/ja not_active Expired
• 1974
  • 1974-07-17 GB GB3169174A patent/GB1474999A/en not_active Expired
  • 1974-07-22 DE DE2435237A patent/DE2435237A1/de active Pending
  • 1974-07-23 FR FR7425572A patent/FR2246070B1/fr not_active Expired

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