FR2212710B1 - - Google Patents

Info

Publication number
FR2212710B1
FR2212710B1 FR7341689A FR7341689A FR2212710B1 FR 2212710 B1 FR2212710 B1 FR 2212710B1 FR 7341689 A FR7341689 A FR 7341689A FR 7341689 A FR7341689 A FR 7341689A FR 2212710 B1 FR2212710 B1 FR 2212710B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7341689A
Other versions
FR2212710A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2212710A1 publication Critical patent/FR2212710A1/fr
Application granted granted Critical
Publication of FR2212710B1 publication Critical patent/FR2212710B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7341689A 1972-12-29 1973-11-14 Expired FR2212710B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00319255A US3832574A (en) 1972-12-29 1972-12-29 Fast insulated gate field effect transistor circuit using multiple threshold technology

Publications (2)

Publication Number Publication Date
FR2212710A1 FR2212710A1 (fr) 1974-07-26
FR2212710B1 true FR2212710B1 (fr) 1976-05-14

Family

ID=23241487

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7341689A Expired FR2212710B1 (fr) 1972-12-29 1973-11-14

Country Status (7)

Country Link
US (1) US3832574A (fr)
JP (1) JPS548439B2 (fr)
CA (1) CA1000809A (fr)
DE (1) DE2362098C2 (fr)
FR (1) FR2212710B1 (fr)
GB (1) GB1444237A (fr)
IT (1) IT1001601B (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911289A (en) * 1972-08-18 1975-10-07 Matsushita Electric Ind Co Ltd MOS type semiconductor IC device
FR2264434B1 (fr) * 1974-03-12 1976-07-16 Thomson Csf
JPS5342587B2 (fr) * 1974-04-23 1978-11-13
JPS5178665A (fr) * 1974-12-24 1976-07-08 Ibm
US4110633A (en) * 1977-06-30 1978-08-29 International Business Machines Corporation Depletion/enhancement mode FET logic circuit
JPS5587471A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Mos dynamic circuit
WO1980001528A1 (fr) * 1979-01-11 1980-07-24 Western Electric Co Circuit logique tampon a trois etats
JPS55115729A (en) * 1979-02-28 1980-09-05 Toshiba Corp Mos transistor circuit
US4418292A (en) * 1980-05-28 1983-11-29 Raytheon Company Logic gate having a noise immunity circuit
US4418291A (en) * 1980-05-28 1983-11-29 Raytheon Company Logic gate having an isolation FET and noise immunity circuit
US4384216A (en) * 1980-08-22 1983-05-17 International Business Machines Corporation Controlled power performance driver circuit
US4406957A (en) * 1981-10-22 1983-09-27 Rca Corporation Input buffer circuit
US4525640A (en) * 1983-03-31 1985-06-25 Ibm Corporation High performance and gate having an "natural" or zero threshold transistor for providing a faster rise time for the output
FR2575013B1 (fr) * 1984-12-14 1987-01-16 Thomson Csf Porte logique a coincidence, et circuits logiques sequentiels mettant en oeuvre cette porte a coincidence

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
US3475621A (en) * 1967-03-23 1969-10-28 Ibm Standardized high-density integrated circuit arrangement and method
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
DE2064977C3 (de) * 1969-09-04 1973-12-13 Rca Corp., New York, N.Y. (V.St.A.) Impulsübertragungsschaltung mit Aus gleich von Signalamphtudenverlusten Ausscheidung aus 2044008
US3654623A (en) * 1970-03-12 1972-04-04 Signetics Corp Binary memory circuit with coupled short term and long term storage means
JPS5211199B1 (fr) * 1970-05-27 1977-03-29
US3651342A (en) * 1971-03-15 1972-03-21 Rca Corp Apparatus for increasing the speed of series connected transistors
US3702943A (en) * 1971-11-05 1972-11-14 Rca Corp Field-effect transistor circuit for detecting changes in voltage level

Also Published As

Publication number Publication date
IT1001601B (it) 1976-04-30
US3832574A (en) 1974-08-27
JPS4999283A (fr) 1974-09-19
FR2212710A1 (fr) 1974-07-26
CA1000809A (en) 1976-11-30
DE2362098A1 (de) 1974-07-04
GB1444237A (en) 1976-07-28
DE2362098C2 (de) 1982-02-25
JPS548439B2 (fr) 1979-04-16

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Legal Events

Date Code Title Description
ST Notification of lapse