FR2210014B1 - - Google Patents

Info

Publication number
FR2210014B1
FR2210014B1 FR7344031A FR7344031A FR2210014B1 FR 2210014 B1 FR2210014 B1 FR 2210014B1 FR 7344031 A FR7344031 A FR 7344031A FR 7344031 A FR7344031 A FR 7344031A FR 2210014 B1 FR2210014 B1 FR 2210014B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7344031A
Other languages
French (fr)
Other versions
FR2210014A1 (US06605200-20030812-C00035.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2210014A1 publication Critical patent/FR2210014A1/fr
Application granted granted Critical
Publication of FR2210014B1 publication Critical patent/FR2210014B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/974Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Electron Beam Exposure (AREA)
FR7344031A 1972-12-11 1973-12-10 Expired FR2210014B1 (US06605200-20030812-C00035.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00314002A US3841904A (en) 1972-12-11 1972-12-11 Method of making a metal silicide-silicon schottky barrier

Publications (2)

Publication Number Publication Date
FR2210014A1 FR2210014A1 (US06605200-20030812-C00035.png) 1974-07-05
FR2210014B1 true FR2210014B1 (US06605200-20030812-C00035.png) 1978-11-10

Family

ID=23218106

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7344031A Expired FR2210014B1 (US06605200-20030812-C00035.png) 1972-12-11 1973-12-10

Country Status (6)

Country Link
US (1) US3841904A (US06605200-20030812-C00035.png)
JP (1) JPS4997000A (US06605200-20030812-C00035.png)
CA (1) CA990415A (US06605200-20030812-C00035.png)
DE (1) DE2360030C3 (US06605200-20030812-C00035.png)
FR (1) FR2210014B1 (US06605200-20030812-C00035.png)
GB (1) GB1411830A (US06605200-20030812-C00035.png)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110488A (en) * 1976-04-09 1978-08-29 Rca Corporation Method for making schottky barrier diodes
US4052253A (en) * 1976-09-27 1977-10-04 Motorola, Inc. Semiconductor-oxide etchant
DE2658124C3 (de) * 1976-12-22 1982-05-06 Dynamit Nobel Ag, 5210 Troisdorf Verfahren zur Herstellung von Elektroschmelzkorund
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
US4675713A (en) * 1982-05-10 1987-06-23 Motorola, Inc. MOS transistor
US4816879A (en) * 1982-12-08 1989-03-28 North American Philips Corporation, Signetics Division Schottky-type rectifier having controllable barrier height
US4687537A (en) * 1986-04-15 1987-08-18 Rca Corporation Epitaxial metal silicide layers
US4914042A (en) * 1986-09-30 1990-04-03 Colorado State University Research Foundation Forming a transition metal silicide radiation detector and source
US5804034A (en) * 1994-03-21 1998-09-08 Texas Instruments Incorporated Method for manufacturing semiconductor device
US7002197B2 (en) * 2004-01-23 2006-02-21 Hewlett-Packard Development Company, L.P. Cross point resistive memory array
CA2702851A1 (en) * 2007-09-10 2009-03-19 University Of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
WO2014071343A1 (en) 2012-11-05 2014-05-08 University Of Florida Research Foundation, Inc. Brightness compensation in a display

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397450A (en) * 1964-01-31 1968-08-20 Fairchild Camera Instr Co Method of forming a metal rectifying contact to semiconductor material by displacement plating
FR1481605A (fr) * 1965-06-02 1967-05-19 Texas Instruments Inc Procédé de fabrication de contacts ohmiques sur des composants semi-conducteurs
US3519479A (en) * 1965-12-16 1970-07-07 Matsushita Electronics Corp Method of manufacturing semiconductor device
US3476984A (en) * 1966-11-10 1969-11-04 Solitron Devices Schottky barrier semiconductor device
JPS4826188B1 (US06605200-20030812-C00035.png) * 1968-10-04 1973-08-07
US3642526A (en) * 1969-03-06 1972-02-15 Hitachi Ltd Semiconductor surface barrier diode of schottky type and method of making same
US3669730A (en) * 1970-04-24 1972-06-13 Bell Telephone Labor Inc Modifying barrier layer devices
US3742317A (en) * 1970-09-02 1973-06-26 Instr Inc Schottky barrier diode

Also Published As

Publication number Publication date
DE2360030B2 (de) 1978-08-03
JPS4997000A (US06605200-20030812-C00035.png) 1974-09-13
FR2210014A1 (US06605200-20030812-C00035.png) 1974-07-05
US3841904A (en) 1974-10-15
CA990415A (en) 1976-06-01
GB1411830A (en) 1975-10-29
DE2360030A1 (de) 1974-06-20
DE2360030C3 (de) 1979-04-05

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Legal Events

Date Code Title Description
ST Notification of lapse