FR2207363B1 - - Google Patents

Info

Publication number
FR2207363B1
FR2207363B1 FR7340426A FR7340426A FR2207363B1 FR 2207363 B1 FR2207363 B1 FR 2207363B1 FR 7340426 A FR7340426 A FR 7340426A FR 7340426 A FR7340426 A FR 7340426A FR 2207363 B1 FR2207363 B1 FR 2207363B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7340426A
Other languages
French (fr)
Other versions
FR2207363A1 (ko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2207363A1 publication Critical patent/FR2207363A1/fr
Application granted granted Critical
Publication of FR2207363B1 publication Critical patent/FR2207363B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR7340426A 1972-11-16 1973-11-14 Expired FR2207363B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1660072A CH552283A (de) 1972-11-16 1972-11-16 Thyristor.

Publications (2)

Publication Number Publication Date
FR2207363A1 FR2207363A1 (ko) 1974-06-14
FR2207363B1 true FR2207363B1 (ko) 1977-06-03

Family

ID=4418683

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7340426A Expired FR2207363B1 (ko) 1972-11-16 1973-11-14

Country Status (4)

Country Link
JP (1) JPS4983389A (ko)
CH (1) CH552283A (ko)
DE (2) DE7245023U (ko)
FR (1) FR2207363B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2830735C2 (de) * 1978-07-13 1982-11-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung
DE102011002479A1 (de) * 2011-01-05 2012-07-05 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren zur Herstellung eines Halbleiterbauelements mit integriertem Lateralwiderstand

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
YU31964B (en) * 1967-09-19 1974-02-28 Ckd Praha Visespojni poluprovodni konstruktivni elemenat
US3564357A (en) * 1969-03-26 1971-02-16 Ckd Praha Multilayer semiconductor device with reduced surface current
JPS501990B1 (ko) * 1970-06-02 1975-01-22

Also Published As

Publication number Publication date
CH552283A (de) 1974-07-31
FR2207363A1 (ko) 1974-06-14
DE2260091A1 (de) 1974-05-30
JPS4983389A (ko) 1974-08-10
DE7245023U (de) 1974-08-29

Similar Documents

Publication Publication Date Title
JPS49101017A (ko)
JPS4920752A (ko)
JPS4936923U (ko)
JPS5325124B2 (ko)
JPS4968531A (ko)
JPS4898758A (ko)
JPS532788Y2 (ko)
JPS5247650Y2 (ko)
JPS5545419B2 (ko)
JPS5146325B2 (ko)
JPS493903U (ko)
JPS4940633A (ko)
JPS4986327U (ko)
JPS4993811U (ko)
CH569336A5 (ko)
CH564215A5 (ko)
CH567199A5 (ko)
CH567412A5 (ko)
CH567414A5 (ko)
CH568041A5 (ko)
CH568132A5 (ko)
CH568283A5 (ko)
CH562478A5 (ko)
CH580463A5 (ko)
CH563631A5 (ko)

Legal Events

Date Code Title Description
ST Notification of lapse