FR2206980A1 - Epitaxial growth of semiconductor material - from liq phase using multiple discrete solns - Google Patents

Epitaxial growth of semiconductor material - from liq phase using multiple discrete solns

Info

Publication number
FR2206980A1
FR2206980A1 FR7335255A FR7335255A FR2206980A1 FR 2206980 A1 FR2206980 A1 FR 2206980A1 FR 7335255 A FR7335255 A FR 7335255A FR 7335255 A FR7335255 A FR 7335255A FR 2206980 A1 FR2206980 A1 FR 2206980A1
Authority
FR
France
Prior art keywords
solns
substrates
semiconductor material
epitaxial growth
multiple discrete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7335255A
Other languages
English (en)
French (fr)
Other versions
FR2206980B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2206980A1 publication Critical patent/FR2206980A1/fr
Application granted granted Critical
Publication of FR2206980B1 publication Critical patent/FR2206980B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7335255A 1972-11-20 1973-09-27 Epitaxial growth of semiconductor material - from liq phase using multiple discrete solns Granted FR2206980A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1885072 1972-11-20

Publications (2)

Publication Number Publication Date
FR2206980A1 true FR2206980A1 (en) 1974-06-14
FR2206980B1 FR2206980B1 (enExample) 1976-10-01

Family

ID=4435674

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7335255A Granted FR2206980A1 (en) 1972-11-20 1973-09-27 Epitaxial growth of semiconductor material - from liq phase using multiple discrete solns

Country Status (1)

Country Link
FR (1) FR2206980A1 (enExample)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
FR2206980B1 (enExample) 1976-10-01

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Legal Events

Date Code Title Description
ST Notification of lapse