FR2205749A1 - - Google Patents
Info
- Publication number
- FR2205749A1 FR2205749A1 FR7239748A FR7239748A FR2205749A1 FR 2205749 A1 FR2205749 A1 FR 2205749A1 FR 7239748 A FR7239748 A FR 7239748A FR 7239748 A FR7239748 A FR 7239748A FR 2205749 A1 FR2205749 A1 FR 2205749A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7239748A FR2205749B1 (xx) | 1972-11-09 | 1972-11-09 | |
NL7303347A NL7303347A (xx) | 1972-03-10 | 1973-03-09 | |
CH345873A CH568659A5 (xx) | 1972-03-10 | 1973-03-09 | |
IT7321365A IT981240B (it) | 1972-03-10 | 1973-03-09 | Perfezionamenti ai gridistori per iperfrequenze |
JP48028450A JPS48103276A (xx) | 1972-03-10 | 1973-03-10 | |
US00340013A US3814995A (en) | 1972-03-10 | 1973-03-12 | Field-effect gridistor-type transistor structure |
GB1173473A GB1396054A (en) | 1972-03-10 | 1973-03-12 | Field-effect gridistor-type transistor structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7239748A FR2205749B1 (xx) | 1972-11-09 | 1972-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2205749A1 true FR2205749A1 (xx) | 1974-05-31 |
FR2205749B1 FR2205749B1 (xx) | 1978-03-31 |
Family
ID=9106909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7239748A Expired FR2205749B1 (xx) | 1972-03-10 | 1972-11-09 |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2205749B1 (xx) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0656646A1 (en) * | 1993-11-29 | 1995-06-07 | Texas Instruments Incorporated | Method of making devices with buried layers by epitaxial growth |
EP0703629A2 (de) * | 1994-08-30 | 1996-03-27 | Daimler-Benz Aktiengesellschaft | Vertikaler Feldeffekt-Transistor hoher Leistung |
WO1997033322A1 (de) * | 1996-03-04 | 1997-09-12 | Daimler-Benz Aktiengesellschaft | Leistungs-feldeffekt-transistor |
WO2000016402A1 (de) * | 1998-09-16 | 2000-03-23 | Siced Electronics Development Gmbh & Co. Kg | Halbleiterstruktur mit kontaktierung |
-
1972
- 1972-11-09 FR FR7239748A patent/FR2205749B1/fr not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0656646A1 (en) * | 1993-11-29 | 1995-06-07 | Texas Instruments Incorporated | Method of making devices with buried layers by epitaxial growth |
EP0703629A2 (de) * | 1994-08-30 | 1996-03-27 | Daimler-Benz Aktiengesellschaft | Vertikaler Feldeffekt-Transistor hoher Leistung |
EP0703629A3 (de) * | 1994-08-30 | 1996-11-13 | Daimler Benz Ag | Vertikaler Feldeffekt-Transistor hoher Leistung |
WO1997033322A1 (de) * | 1996-03-04 | 1997-09-12 | Daimler-Benz Aktiengesellschaft | Leistungs-feldeffekt-transistor |
WO2000016402A1 (de) * | 1998-09-16 | 2000-03-23 | Siced Electronics Development Gmbh & Co. Kg | Halbleiterstruktur mit kontaktierung |
Also Published As
Publication number | Publication date |
---|---|
FR2205749B1 (xx) | 1978-03-31 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |