FR2205749A1 - - Google Patents

Info

Publication number
FR2205749A1
FR2205749A1 FR7239748A FR7239748A FR2205749A1 FR 2205749 A1 FR2205749 A1 FR 2205749A1 FR 7239748 A FR7239748 A FR 7239748A FR 7239748 A FR7239748 A FR 7239748A FR 2205749 A1 FR2205749 A1 FR 2205749A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7239748A
Other languages
French (fr)
Other versions
FR2205749B1 (ja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TESZNER STANISLAS FR
Original Assignee
TESZNER STANISLAS FR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TESZNER STANISLAS FR filed Critical TESZNER STANISLAS FR
Priority to FR7239748A priority Critical patent/FR2205749B1/fr
Priority to NL7303347A priority patent/NL7303347A/xx
Priority to CH345873A priority patent/CH568659A5/xx
Priority to IT7321365A priority patent/IT981240B/it
Priority to JP48028450A priority patent/JPS48103276A/ja
Priority to US00340013A priority patent/US3814995A/en
Priority to GB1173473A priority patent/GB1396054A/en
Publication of FR2205749A1 publication Critical patent/FR2205749A1/fr
Application granted granted Critical
Publication of FR2205749B1 publication Critical patent/FR2205749B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR7239748A 1972-03-10 1972-11-09 Expired FR2205749B1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7239748A FR2205749B1 (ja) 1972-11-09 1972-11-09
NL7303347A NL7303347A (ja) 1972-03-10 1973-03-09
CH345873A CH568659A5 (ja) 1972-03-10 1973-03-09
IT7321365A IT981240B (it) 1972-03-10 1973-03-09 Perfezionamenti ai gridistori per iperfrequenze
JP48028450A JPS48103276A (ja) 1972-03-10 1973-03-10
US00340013A US3814995A (en) 1972-03-10 1973-03-12 Field-effect gridistor-type transistor structure
GB1173473A GB1396054A (en) 1972-03-10 1973-03-12 Field-effect gridistor-type transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7239748A FR2205749B1 (ja) 1972-11-09 1972-11-09

Publications (2)

Publication Number Publication Date
FR2205749A1 true FR2205749A1 (ja) 1974-05-31
FR2205749B1 FR2205749B1 (ja) 1978-03-31

Family

ID=9106909

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7239748A Expired FR2205749B1 (ja) 1972-03-10 1972-11-09

Country Status (1)

Country Link
FR (1) FR2205749B1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0656646A1 (en) * 1993-11-29 1995-06-07 Texas Instruments Incorporated Method of making devices with buried layers by epitaxial growth
EP0703629A2 (de) * 1994-08-30 1996-03-27 Daimler-Benz Aktiengesellschaft Vertikaler Feldeffekt-Transistor hoher Leistung
WO1997033322A1 (de) * 1996-03-04 1997-09-12 Daimler-Benz Aktiengesellschaft Leistungs-feldeffekt-transistor
WO2000016402A1 (de) * 1998-09-16 2000-03-23 Siced Electronics Development Gmbh & Co. Kg Halbleiterstruktur mit kontaktierung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0656646A1 (en) * 1993-11-29 1995-06-07 Texas Instruments Incorporated Method of making devices with buried layers by epitaxial growth
EP0703629A2 (de) * 1994-08-30 1996-03-27 Daimler-Benz Aktiengesellschaft Vertikaler Feldeffekt-Transistor hoher Leistung
EP0703629A3 (de) * 1994-08-30 1996-11-13 Daimler Benz Ag Vertikaler Feldeffekt-Transistor hoher Leistung
WO1997033322A1 (de) * 1996-03-04 1997-09-12 Daimler-Benz Aktiengesellschaft Leistungs-feldeffekt-transistor
WO2000016402A1 (de) * 1998-09-16 2000-03-23 Siced Electronics Development Gmbh & Co. Kg Halbleiterstruktur mit kontaktierung

Also Published As

Publication number Publication date
FR2205749B1 (ja) 1978-03-31

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Legal Events

Date Code Title Description
ST Notification of lapse