FR2205749A1 - - Google Patents

Info

Publication number
FR2205749A1
FR2205749A1 FR7239748A FR7239748A FR2205749A1 FR 2205749 A1 FR2205749 A1 FR 2205749A1 FR 7239748 A FR7239748 A FR 7239748A FR 7239748 A FR7239748 A FR 7239748A FR 2205749 A1 FR2205749 A1 FR 2205749A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7239748A
Other languages
French (fr)
Other versions
FR2205749B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7239748A priority Critical patent/FR2205749B1/fr
Priority to IT7321365A priority patent/IT981240B/it
Priority to CH345873A priority patent/CH568659A5/xx
Priority to NL7303347A priority patent/NL7303347A/xx
Priority to JP48028450A priority patent/JPS48103276A/ja
Priority to GB1173473A priority patent/GB1396054A/en
Priority to US00340013A priority patent/US3814995A/en
Publication of FR2205749A1 publication Critical patent/FR2205749A1/fr
Application granted granted Critical
Publication of FR2205749B1 publication Critical patent/FR2205749B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
FR7239748A 1972-03-10 1972-11-09 Expired FR2205749B1 (enrdf_load_stackoverflow)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7239748A FR2205749B1 (enrdf_load_stackoverflow) 1972-11-09 1972-11-09
IT7321365A IT981240B (it) 1972-03-10 1973-03-09 Perfezionamenti ai gridistori per iperfrequenze
CH345873A CH568659A5 (enrdf_load_stackoverflow) 1972-03-10 1973-03-09
NL7303347A NL7303347A (enrdf_load_stackoverflow) 1972-03-10 1973-03-09
JP48028450A JPS48103276A (enrdf_load_stackoverflow) 1972-03-10 1973-03-10
GB1173473A GB1396054A (en) 1972-03-10 1973-03-12 Field-effect gridistor-type transistor structure
US00340013A US3814995A (en) 1972-03-10 1973-03-12 Field-effect gridistor-type transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7239748A FR2205749B1 (enrdf_load_stackoverflow) 1972-11-09 1972-11-09

Publications (2)

Publication Number Publication Date
FR2205749A1 true FR2205749A1 (enrdf_load_stackoverflow) 1974-05-31
FR2205749B1 FR2205749B1 (enrdf_load_stackoverflow) 1978-03-31

Family

ID=9106909

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7239748A Expired FR2205749B1 (enrdf_load_stackoverflow) 1972-03-10 1972-11-09

Country Status (1)

Country Link
FR (1) FR2205749B1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0656646A1 (en) * 1993-11-29 1995-06-07 Texas Instruments Incorporated Method of making devices with buried layers by epitaxial growth
EP0703629A3 (de) * 1994-08-30 1996-11-13 Daimler Benz Ag Vertikaler Feldeffekt-Transistor hoher Leistung
WO1997033322A1 (de) * 1996-03-04 1997-09-12 Daimler-Benz Aktiengesellschaft Leistungs-feldeffekt-transistor
WO2000016402A1 (de) * 1998-09-16 2000-03-23 Siced Electronics Development Gmbh & Co. Kg Halbleiterstruktur mit kontaktierung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0656646A1 (en) * 1993-11-29 1995-06-07 Texas Instruments Incorporated Method of making devices with buried layers by epitaxial growth
EP0703629A3 (de) * 1994-08-30 1996-11-13 Daimler Benz Ag Vertikaler Feldeffekt-Transistor hoher Leistung
WO1997033322A1 (de) * 1996-03-04 1997-09-12 Daimler-Benz Aktiengesellschaft Leistungs-feldeffekt-transistor
WO2000016402A1 (de) * 1998-09-16 2000-03-23 Siced Electronics Development Gmbh & Co. Kg Halbleiterstruktur mit kontaktierung

Also Published As

Publication number Publication date
FR2205749B1 (enrdf_load_stackoverflow) 1978-03-31

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