FR2205708B1 - - Google Patents
Info
- Publication number
- FR2205708B1 FR2205708B1 FR7339386A FR7339386A FR2205708B1 FR 2205708 B1 FR2205708 B1 FR 2205708B1 FR 7339386 A FR7339386 A FR 7339386A FR 7339386 A FR7339386 A FR 7339386A FR 2205708 B1 FR2205708 B1 FR 2205708B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11146872A JPS5727545B2 (sl) | 1972-11-06 | 1972-11-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2205708A1 FR2205708A1 (sl) | 1974-05-31 |
| FR2205708B1 true FR2205708B1 (sl) | 1983-09-23 |
Family
ID=14561995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7339386A Expired FR2205708B1 (sl) | 1972-11-06 | 1973-11-06 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5727545B2 (sl) |
| FR (1) | FR2205708B1 (sl) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1502270A (en) * | 1974-10-30 | 1978-03-01 | Hitachi Ltd | Word line driver circuit in memory circuit |
| JPS51147224A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Semiconductor memory |
| JPS5271141A (en) * | 1975-12-10 | 1977-06-14 | Hitachi Ltd | Word line driving circuit |
| JPS5493335A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Decoder circuit |
| JPS5625291A (en) * | 1979-08-07 | 1981-03-11 | Nec Corp | Semiconductor circuit |
| JPS56156985A (en) * | 1980-02-04 | 1981-12-03 | Texas Instruments Inc | Decoder |
| JPS6042554B2 (ja) * | 1980-12-24 | 1985-09-24 | 富士通株式会社 | Ｃｍｏｓメモリデコ−ダ回路 |
| US4514829A (en) * | 1982-12-30 | 1985-04-30 | International Business Machines Corporation | Word line decoder and driver circuits for high density semiconductor memory |
| JPS6098598A (ja) * | 1983-11-01 | 1985-06-01 | Fujitsu Ltd | 半導体記憶装置 |
| JPS63171494A (ja) * | 1987-02-20 | 1988-07-15 | Toshiba Corp | アドレス選択回路 |
| JPS63275099A (ja) * | 1987-05-07 | 1988-11-11 | Matsushita Electronics Corp | 半導体記憶装置 |
-
1972
- 1972-11-06 JP JP11146872A patent/JPS5727545B2/ja not_active Expired
-
1973
- 1973-11-06 FR FR7339386A patent/FR2205708B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4968631A (sl) | 1974-07-03 |
| JPS5727545B2 (sl) | 1982-06-11 |
| FR2205708A1 (sl) | 1974-05-31 |