FR2193257A1 - Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask - Google Patents

Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask

Info

Publication number
FR2193257A1
FR2193257A1 FR7225841A FR7225841A FR2193257A1 FR 2193257 A1 FR2193257 A1 FR 2193257A1 FR 7225841 A FR7225841 A FR 7225841A FR 7225841 A FR7225841 A FR 7225841A FR 2193257 A1 FR2193257 A1 FR 2193257A1
Authority
FR
France
Prior art keywords
type
strip
mask
prodn
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7225841A
Other languages
English (en)
French (fr)
Other versions
FR2193257B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7225841A priority Critical patent/FR2193257A1/fr
Publication of FR2193257A1 publication Critical patent/FR2193257A1/fr
Application granted granted Critical
Publication of FR2193257B1 publication Critical patent/FR2193257B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10P95/00—

Landscapes

  • Electrodes Of Semiconductors (AREA)
FR7225841A 1972-07-18 1972-07-18 Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask Granted FR2193257A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7225841A FR2193257A1 (en) 1972-07-18 1972-07-18 Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7225841A FR2193257A1 (en) 1972-07-18 1972-07-18 Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask

Publications (2)

Publication Number Publication Date
FR2193257A1 true FR2193257A1 (en) 1974-02-15
FR2193257B1 FR2193257B1 (OSRAM) 1977-01-14

Family

ID=9101987

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7225841A Granted FR2193257A1 (en) 1972-07-18 1972-07-18 Very high frequency F.E.T. prodn - of planar type by diffusion doping through mask

Country Status (1)

Country Link
FR (1) FR2193257A1 (OSRAM)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE ELECTRICAL DESIGN NEWS, VOL. 14, 1ER JANVIER 1969. "SCHOTIKY DIODES SPEED UP DIGITAL IC'S", R.H. CUSHMAN, PAGES 37-40 *

Also Published As

Publication number Publication date
FR2193257B1 (OSRAM) 1977-01-14

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Legal Events

Date Code Title Description
ST Notification of lapse