FR2186736A1 - - Google Patents

Info

Publication number
FR2186736A1
FR2186736A1 FR7319463A FR7319463A FR2186736A1 FR 2186736 A1 FR2186736 A1 FR 2186736A1 FR 7319463 A FR7319463 A FR 7319463A FR 7319463 A FR7319463 A FR 7319463A FR 2186736 A1 FR2186736 A1 FR 2186736A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7319463A
Other languages
French (fr)
Other versions
FR2186736B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Handel und Investments AG
Original Assignee
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Handel und Investments AG filed Critical Plessey Handel und Investments AG
Publication of FR2186736A1 publication Critical patent/FR2186736A1/fr
Application granted granted Critical
Publication of FR2186736B1 publication Critical patent/FR2186736B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR7319463A 1972-05-31 1973-05-29 Expired FR2186736B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2547372A GB1363190A (en) 1972-05-31 1972-05-31 Semiconductor memory device

Publications (2)

Publication Number Publication Date
FR2186736A1 true FR2186736A1 (en) 1974-01-11
FR2186736B1 FR2186736B1 (en) 1976-11-12

Family

ID=10228291

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7319463A Expired FR2186736B1 (en) 1972-05-31 1973-05-29

Country Status (5)

Country Link
JP (1) JPS4944677A (en)
DE (1) DE2325094A1 (en)
FR (1) FR2186736B1 (en)
GB (1) GB1363190A (en)
NL (1) NL7307596A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392468A1 (en) * 1977-05-26 1978-12-22 Itt SEMICONDUCTOR MEMORY CELL ALLOWING REMAINING LOAD STORAGE

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528232B2 (en) * 1974-11-01 1980-07-26
JPS63254598A (en) * 1987-04-11 1988-10-21 旭精工株式会社 2-type coin selector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2116410A1 (en) * 1970-12-03 1972-07-13 Ncr Co

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141515B2 (en) * 1971-11-29 1976-11-10
JPS525233B2 (en) * 1972-02-29 1977-02-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2116410A1 (en) * 1970-12-03 1972-07-13 Ncr Co

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "WESCON TECHNICAL PAPERS", VOL. 16, 1972. "A 1024 BIT MNOS ELECTRIALLY-ALTERABLE ROM", G.C. LOCKWOOD ET AL, PAGES 1-6, ARTICLE PRESENTE A "WESTERN ELECTRONIC SHOW AND CONVENTION IN LOS ANGELES, CALIFORNIA, SEPTEMBER 19-22, 1972". ) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392468A1 (en) * 1977-05-26 1978-12-22 Itt SEMICONDUCTOR MEMORY CELL ALLOWING REMAINING LOAD STORAGE

Also Published As

Publication number Publication date
NL7307596A (en) 1973-12-04
GB1363190A (en) 1974-08-14
FR2186736B1 (en) 1976-11-12
JPS4944677A (en) 1974-04-26
DE2325094A1 (en) 1973-12-13

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property