FR2185860A1 - - Google Patents

Info

Publication number
FR2185860A1
FR2185860A1 FR7314646A FR7314646A FR2185860A1 FR 2185860 A1 FR2185860 A1 FR 2185860A1 FR 7314646 A FR7314646 A FR 7314646A FR 7314646 A FR7314646 A FR 7314646A FR 2185860 A1 FR2185860 A1 FR 2185860A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7314646A
Other languages
French (fr)
Other versions
FR2185860B1 (ja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2185860A1 publication Critical patent/FR2185860A1/fr
Application granted granted Critical
Publication of FR2185860B1 publication Critical patent/FR2185860B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
FR7314646A 1972-04-20 1973-04-20 Expired FR2185860B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3976472A JPS493583A (ja) 1972-04-20 1972-04-20

Publications (2)

Publication Number Publication Date
FR2185860A1 true FR2185860A1 (ja) 1974-01-04
FR2185860B1 FR2185860B1 (ja) 1977-08-19

Family

ID=12561993

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7314646A Expired FR2185860B1 (ja) 1972-04-20 1973-04-20

Country Status (6)

Country Link
JP (1) JPS493583A (ja)
CA (1) CA982701A (ja)
DE (1) DE2320563B2 (ja)
FR (1) FR2185860B1 (ja)
GB (1) GB1425957A (ja)
NL (1) NL7305643A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022355A1 (en) * 1979-07-06 1981-01-14 Hitachi, Ltd. Gate turn-off thyristor
EP1111684A1 (fr) * 1999-12-24 2001-06-27 STMicroelectronics SA Procédé de fabrication de composants de puissance verticaux

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5147583B2 (ja) * 1972-12-29 1976-12-15
JPS5754969B2 (ja) * 1974-04-04 1982-11-20
JPS5753672B2 (ja) * 1974-04-10 1982-11-13
JPS57658B2 (ja) * 1974-04-16 1982-01-07
JPS5714064B2 (ja) * 1974-04-25 1982-03-20
JPS5718710B2 (ja) * 1974-05-10 1982-04-17
JPS5648983B2 (ja) * 1974-05-10 1981-11-19
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
JPS5630758A (en) * 1979-08-21 1981-03-27 Nippon Telegr & Teleph Corp <Ntt> Negative feedback type bipolar transistor
CN113380883A (zh) * 2021-06-08 2021-09-10 深圳市槟城电子股份有限公司 半导体放电管及供电电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0022355A1 (en) * 1979-07-06 1981-01-14 Hitachi, Ltd. Gate turn-off thyristor
EP1111684A1 (fr) * 1999-12-24 2001-06-27 STMicroelectronics SA Procédé de fabrication de composants de puissance verticaux

Also Published As

Publication number Publication date
DE2320563A1 (de) 1973-10-25
CA982701A (en) 1976-01-27
NL7305643A (ja) 1973-10-23
DE2320563B2 (de) 1976-04-01
FR2185860B1 (ja) 1977-08-19
GB1425957A (en) 1976-02-25
JPS493583A (ja) 1974-01-12

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Legal Events

Date Code Title Description
ST Notification of lapse